Adrian Vaisman Chasin

According to our database1, Adrian Vaisman Chasin authored at least 36 papers between 2008 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Bibliography

2024
Fundamental understanding of NBTI degradation mechanism in IGZO channel devices.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

Light-Assisted Investigation of the Role of Oxygen Flow during IGZO Deposition on Deep Subgap States and their Evolution Under PBTI.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

DC Reliability Study of $\text{high}-\kappa$ GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

Side and Corner Region Non-Uniformities in Grown SiO2 and Their Implications on Current, Capacitance and Breakdown Characteristics.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023
Lowest IOFF < 3×10<sup>-21</sup> A/μm in capacitorless DRAM achieved by Reactive Ion Etch of IGZO-TFT.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

MTJ degradation in multi-pillar SOT-MRAM with selective writing.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022
Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacks.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Degradation mechanism of amorphous IGZO-based bipolar metal-semiconductor-metal selectors.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Modelling ultra-fast threshold voltage instabilities in Hf-based ferroelectrics.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

MTJ degradation in SOT-MRAM by self-heating-induced diffusion.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Device engineering guidelines for performance boost in IGZO front gated TFTs based on defect control.
Proceedings of the International Conference on IC Design and Technology, 2022

2021
The properties, effect and extraction of localized defect profiles from degraded FET characteristics.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

Process-induced charging damage in IGZO nTFTs.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020
Conduction and Breakdown Mechanisms in Low-k Spacer and Nitride Spacer Dielectric Stacks in Middle of Line Interconnects.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Relevance of fin dimensions and high-pressure anneals on hot-carrier degradation.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019
Role of Defects in the Reliability of HfO2/Si-Based Spacer Dielectric Stacks for Local Interconnects.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

Full (V<sub>g</sub>, V<sub>d</sub>) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

Array-Based Statistical Characterization of CMOS Degradation Modes and Modeling of the Time-Dependent Variability Induced by Different Stress Patterns in the {V<sub>G</sub>, V<sub>D</sub>} bias space.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants.
Proceedings of the 49th European Solid-State Device Research Conference, 2019

Impact of Device Architecture and Gate Stack Processing on the Low-Frequency Noise of Silicon Nanowire Transistors.
Proceedings of the 13th IEEE International Conference on ASIC, 2019

2018
A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability.
Microelectron. Reliab., 2018

New methodology for modelling MOL TDDB coping with variability.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

Hot electron and hot hole induced degradation of SiGe p-FinFETs studied by degradation maps in the entire bias space.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

Self-heating-aware CMOS reliability characterization using degradation maps.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

2014
Impact of etch stop layer on negative bias illumination stress of amorphous Indium Gallium Zinc Oxide transistors.
Proceedings of the 44th European Solid State Device Research Conference, 2014

2012
Bidirectional communication in an HF hybrid organic/solution-processed metal-oxide RFID tag.
Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012

2009
Robust model reduction of uncertain systems maintaining uncertainty structure.
Int. J. Control, 2009

2008
A High Power Density Electrostatic Vibration-to-Electric Energy Converter Based On An In-Plane Overlap Plate (IPOP) Mechanism
CoRR, 2008


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