Yusuke Higashi

Orcid: 0000-0001-6121-0069

According to our database1, Yusuke Higashi authored at least 13 papers between 2017 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Bibliography

2024
Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

Side and Corner Region Non-Uniformities in Grown SiO2 and Their Implications on Current, Capacitance and Breakdown Characteristics.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023
Demonstration of Recovery Annealing on 7-Bits per Cell 3D Flash Memory at Cryogenic Operation for Bit Cost Scalability and Sustainability.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Comprehensive Analysis of Hole-Trapping in SiN Films with a Wide Range of Time Constants Based on Dynamic C-V.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Novel Operation Scheme for Suppressing Disturb in HfO2-based FeFET Considering Charge- Trapping-Coupled Polarization Dynamics.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022
Insight to Data Retention loss in ferroelectric Hf0.5Zr0.5O2 pFET and nFET from simultaneous PV and IV measurements.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Future route presentation to autonomous mobile wheelchair passengers using the movement of vibrotactile stimuli.
Proceedings of the 61st IEEE Annual Conference of the Society of Instrument and Control Engineers, 2022

Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Toward 7 Bits per Cell: Synergistic Improvement of 3D Flash Memory by Combination of Single-crystal Channel and Cryogenic Operation.
Proceedings of the IEEE International Memory Workshop, 2022

2019
New Insights into the Imprint Effect in FE-HfO2 and its Recovery.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018
Study on mechanism of thermal curing in ultra-thin gate dielectrics.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017
Error Tolerance Analysis of Deep Learning Hardware Using a Restricted Boltzmann Machine Toward Low-Power Memory Implementation.
IEEE Trans. Circuits Syst. II Express Briefs, 2017

Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface.
Microelectron. Reliab., 2017


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