Michiel Vandemaele

According to our database1, Michiel Vandemaele authored at least 17 papers between 2019 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Bibliography

2024
Exploiting Bias Temperature Instability for Reservoir Computing in Edge Artificial Intelligence Applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023
Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Reliability challenges in Forksheet Devices: (Invited Paper).
Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022
Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-Transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

A Ring-Oscillator-Based Degradation Monitor Concept with Tamper Detection Capability.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021
A BSIM-Based Predictive Hot-Carrier Aging Compact Model.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

Physics-based device aging modelling framework for accurate circuit reliability assessment.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

The properties, effect and extraction of localized defect profiles from degraded FET characteristics.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020
The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

A Compact Physics Analytical Model for Hot-Carrier Degradation.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019
Full (V<sub>g</sub>, V<sub>d</sub>) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

Array-Based Statistical Characterization of CMOS Degradation Modes and Modeling of the Time-Dependent Variability Induced by Different Stress Patterns in the {V<sub>G</sub>, V<sub>D</sub>} bias space.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants.
Proceedings of the 49th European Solid-State Device Research Conference, 2019


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