Antonio Arreghini

According to our database, Antonio Arreghini authored at least 13 papers between 2008 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2024

Exploring the Reliability Limits for the Z-Pitch Scaling of Molybdenum Inter-Word Line Oxides in 3D NAND.

D. Tiernc, Antonio Arreghini, Alicja Lesniewska, Y. Jeong, Marleen H. van der Veen, J. Stiers, N. Bazzazian, Ivan Ciofi, Geert Van den Bosch, Maarten Rosmeulen

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance.

Yusuke Higashi, J. P. Bastos, Adrian Vaisman Chasin, Laurent Breuil, Antonio Arreghini, S. Ramesh, S. Rachidi, Y. Jeong, Geert Van den Bosch, Maarten Rosmeulen

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Pure-Metal Replacement Gate for Reliable 30 nm Pitch Scaled 3D NAND Flash.

S. Rachidi, S. Ramesh, Davide Tierno, G. L. Donadio, A. Pacco, J. W. Maes, Y. Jeong, Antonio Arreghini, Geert Van den Bosch, Maarten Rosmeulen

Proceedings of the IEEE International Memory Workshop, 2024

Gate Side Injection Operating Mode for 3D NAND Flash Memories.

Laurent Breuil, R. Izmailov, Mihaela Ioana Popovici, J. Stiers, Antonio Arreghini, S. Ramesh, Geert Van den Bosch, Jan Van Houdt, Maarten Rosmeulen

Proceedings of the IEEE International Memory Workshop, 2024

2023

Enabling 3D NAND Trench Cells for Scaled Flash Memories.

S. Rachidi, S. Ramesh, Laurent Breuil, Z. Tao, Devin Verreck, G. L. Donadio, Antonio Arreghini, Geert Van den Bosch, Maarten Rosmeulen

Proceedings of the IEEE International Memory Workshop, 2023

Optimization of Retention in Ferroelectricity Boosted Gate Stacks for 3D NAND.

Laurent Breuil, Mihaela Ioana Popovici, J. Stiers, Antonio Arreghini, S. Ramesh, Geert Van den Bosch, Jan Van Houdt, Maarten Rosmeulen

Proceedings of the IEEE International Memory Workshop, 2023

2022

Liquid Memory and the Future of Data Storage.

Maarten Rosmeulen, Cesar J. Lockhart de la Rosa, K. Willems, S. Fransen, B.-Y. Shih, Devin Verreck, V. Kalangi, F. Yasin, Harold Philipsen, Y. T. Set, N. Ronchi, W. Van Roy, O. Y. F. Henry, Antonio Arreghini, Geert Van den Bosch, Arnaud Furnémont

Proceedings of the IEEE International Memory Workshop, 2022

At the Extreme of 3D-NAND Scaling: 25 nm Z-Pitch with 10 nm Word Line Cells.

S. Rachidi, Antonio Arreghini, Devin Verreck, G. L. Donadio, K. Banerjee, K. Katcko, Y. Oniki, Geert Van den Bosch, Maarten Rosmeulen

Proceedings of the IEEE International Memory Workshop, 2022

High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction.

Laurent Breuil, L. Nyns, S. Rachidi, K. Banerjee, Antonio Arreghini, J. P. Bastos, S. Ramesh, Geert Van den Bosch, Maarten Rosmeulen

Proceedings of the IEEE International Memory Workshop, 2022

2021

A TCAD Compatible SONOS Trapping Layer Model for Accurate Programming Dynamics.

Franz Schanovsky, Devin Verreck, Antonio Arreghini, Gerhard Rzepa, Zlatan Stanojevic, Christian Kernstock, Oskar Baumgartner, Maarten Rosmeulen, Markus Karner

Proceedings of the IEEE International Memory Workshop, 2021

2019

Impact of Mechanical Stress on the Electrical Performance of 3D NAND.

Anastasiia Kruv, Antonio Arreghini, Mario Gonzalez, Devin Verreck, Geert Van den Bosch, Ingrid De Wolf, Arnaud Furnémont

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2014

Assessment methodology of the lateral migration component in data retention of 3D SONOS memories.

Lifang Liu, Antonio Arreghini, Geert Van den Bosch, Liyang Pan, Jan Van Houdt

Microelectron. Reliab., 2014

2008

Characterization and modeling of Non volatile memory cells based on localized trapping materials.

Antonio Arreghini

PhD thesis, 2008