Stanislav Tyaginov

According to our database1, Stanislav Tyaginov authored at least 24 papers between 2009 and 2024.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2024
Statistical Characterization of Off-State Stress Degradation in Planar HKMG nFETs Using Device Arrays.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023
Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Reliability challenges in Forksheet Devices: (Invited Paper).
Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022
Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-Transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021
A BSIM-Based Predictive Hot-Carrier Aging Compact Model.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

Physics-based device aging modelling framework for accurate circuit reliability assessment.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

The properties, effect and extraction of localized defect profiles from degraded FET characteristics.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020
The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

A Compact Physics Analytical Model for Hot-Carrier Degradation.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019
Full (V<sub>g</sub>, V<sub>d</sub>) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants.
Proceedings of the 49th European Solid-State Device Research Conference, 2019

2016
A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs.
Proceedings of the 46th European Solid-State Device Research Conference, 2016

2015
Comparison of analytic distribution function models for hot-carrier degradation modeling in nLDMOSFETs.
Microelectron. Reliab., 2015

Origins and implications of increased channel hot carrier variability in nFinFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

2011
An analytical approach for physical modeling of hot-carrier induced degradation.
Microelectron. Reliab., 2011

2010
Interface traps density-of-states as a vital component for hot-carrier degradation modeling.
Microelectron. Reliab., 2010

2009
Impact of O-Si-O bond angle fluctuations on the Si-O bond-breakage rate.
Microelectron. Reliab., 2009


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