Harold Dekkers

According to our database, Harold Dekkers authored at least 7 papers between 2022 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Fundamental understanding of NBTI degradation mechanism in IGZO channel devices.

Ying Zhao, Pietro Rinaudo, Adrian Vaisman Chasin, Brecht Truijen, Ben Kaczer, Nouredine Rassoul, Harold Dekkers, Attilio Belmonte, Ingrid De Wolf, Gouri Sankar Kar, Jacopo Franco

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Light-Assisted Investigation of the Role of Oxygen Flow during IGZO Deposition on Deep Subgap States and their Evolution Under PBTI.

Pietro Rinaudo, Adrian Vaisman Chasin, Ying Zhao, Ben Kaczer, Nouredine Rassoul, Harold Dekkers, Michiel J. van Setten, Attilio Belmonte, Ingrid De Wolf, Gouri Sankar Kar, Jacopo Franco

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Novel Cross-Point Architecture utilizing Distributed Diode Selector for Read Margin Amplification.

Taras Ravsher, Andrea Fantini, Kruti Trivedi, Nouredine Rassoul, Harold Dekkers, Attilio Belmonte, Jan Van Houdt, Valeri Afanas'ev, Kurt Wostyn, Sebastien Couet, Gouri Sankar Kar

Proceedings of the IEEE International Memory Workshop, 2024

2023

Lowest IOFF < 3×10^-21 A/μm in capacitorless DRAM achieved by Reactive Ion Etch of IGZO-TFT.

Attilio Belmonte, Shreya Kundu, S. Subhechha, Adrian Vaisman Chasin, Nouredine Rassoul, Harold Dekkers, H. Puliyalil, F. Seidel, P. Carolan, Romain Delhougne, Gouri Sankar Kar

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2022

Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm.

S. Subhechha, Nouredine Rassoul, Attilio Belmonte, Hubert Hody, Harold Dekkers, Michiel J. van Setten, Adrian Vaisman Chasin, Shamin H. Sharifi, S. Sutar, L. Magnarin, Umberto Celano, H. Puliyalil, Shreya Kundu, M. Pak, Lieve Teugels, D. Tsvetanova, Nina Bazzazian, Kevin Vandersmissen, C. Biasotto, D. Batuk, J. Geypen, J. Heijlen, Romain Delhougne, Gouri Sankar Kar

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Degradation mechanism of amorphous IGZO-based bipolar metal-semiconductor-metal selectors.

Taras Ravsher, Andrea Fantini, Adrian Vaisman Chasin, Shamin H. Sharifi, Hubert Hody, Harold Dekkers, Thomas Witters, Jan Van Houdt, Valeri Afanas'ev, Sebastien Couet, Gouri Sankar Kar

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Device engineering guidelines for performance boost in IGZO front gated TFTs based on defect control.

S. Subhechha, Nouredine Rassoul, Attilio Belmonte, Hubert Hody, Harold Dekkers, Michiel J. van Setten, Adrian Vaisman Chasin, Shamin H. Sharifi, K. Banerjee, H. Puliyalil, Shreya Kundu, M. Pak, D. Tsvetanova, Nina Bazzazian, Kevin Vandersmissen, D. Batuk, J. Geypen, J. Heijlen, Romain Delhougne, Gouri Sankar Kar

Proceedings of the International Conference on IC Design and Technology, 2022