Geert Van den Bosch

According to our database, Geert Van den Bosch authored at least 21 papers between 2004 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Exploring the Reliability Limits for the Z-Pitch Scaling of Molybdenum Inter-Word Line Oxides in 3D NAND.

D. Tiernc, Antonio Arreghini, Alicja Lesniewska, Y. Jeong, Marleen H. van der Veen, J. Stiers, N. Bazzazian, Ivan Ciofi, Geert Van den Bosch, Maarten Rosmeulen

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance.

Yusuke Higashi, J. P. Bastos, Adrian Vaisman Chasin, Laurent Breuil, Antonio Arreghini, S. Ramesh, S. Rachidi, Y. Jeong, Geert Van den Bosch, Maarten Rosmeulen

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Pure-Metal Replacement Gate for Reliable 30 nm Pitch Scaled 3D NAND Flash.

S. Rachidi, S. Ramesh, Davide Tierno, G. L. Donadio, A. Pacco, J. W. Maes, Y. Jeong, Antonio Arreghini, Geert Van den Bosch, Maarten Rosmeulen

Proceedings of the IEEE International Memory Workshop, 2024

Gate Side Injection Operating Mode for 3D NAND Flash Memories.

Laurent Breuil, R. Izmailov, Mihaela Ioana Popovici, J. Stiers, Antonio Arreghini, S. Ramesh, Geert Van den Bosch, Jan Van Houdt, Maarten Rosmeulen

Proceedings of the IEEE International Memory Workshop, 2024

2023

Enabling 3D NAND Trench Cells for Scaled Flash Memories.

S. Rachidi, S. Ramesh, Laurent Breuil, Z. Tao, Devin Verreck, G. L. Donadio, Antonio Arreghini, Geert Van den Bosch, Maarten Rosmeulen

Proceedings of the IEEE International Memory Workshop, 2023

Improved MW of IGZO-channel FeFET by Reading Scheme Optimization and Interfacial Engineering.

Zhuo Chen, Nicolo Ronchi, Amey Walke, Kaustuv Banerjee, Mihaela Ioana Popovici, Kostantine Katcko, Geert Van den Bosch, Maarten Rosmeulen, Valeri Afanas'ev, Jan Van Houdt

Proceedings of the IEEE International Memory Workshop, 2023

Optimization of Retention in Ferroelectricity Boosted Gate Stacks for 3D NAND.

Laurent Breuil, Mihaela Ioana Popovici, J. Stiers, Antonio Arreghini, S. Ramesh, Geert Van den Bosch, Jan Van Houdt, Maarten Rosmeulen

Proceedings of the IEEE International Memory Workshop, 2023

2022

Trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacks.

Brecht Truijen, Barry J. O'Sullivan, Md. Nurul Alam, Dieter Claes, M. Thesberg, Philippe Roussel, Adrian Vaisman Chasin, Geert Van den Bosch, Ben Kaczer, Jan Van Houdt

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Modelling ultra-fast threshold voltage instabilities in Hf-based ferroelectrics.

Barry J. O'Sullivan, Brecht Truijen, Vamsi Putcha, Alexander Grill, Adrian Vaisman Chasin, Geert Van den Bosch, Ben Kaczer, Md Nur K. Alam, Jan Van Houdt

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Liquid Memory and the Future of Data Storage.

Maarten Rosmeulen, Cesar J. Lockhart de la Rosa, K. Willems, S. Fransen, B.-Y. Shih, Devin Verreck, V. Kalangi, F. Yasin, Harold Philipsen, Y. T. Set, N. Ronchi, W. Van Roy, O. Y. F. Henry, Antonio Arreghini, Geert Van den Bosch, Arnaud Furnémont

Proceedings of the IEEE International Memory Workshop, 2022

A comprehensive variability study of doped HfO2 FeFET for memory applications.

Nicolo Ronchi, Lars-Åke Ragnarsson, Umberto Celano, Ben Kaczer, K. Kaczmarek, K. Banerjee, Sean R. C. McMitchell, Geert Van den Bosch, Jan Van Houdt

Proceedings of the IEEE International Memory Workshop, 2022

At the Extreme of 3D-NAND Scaling: 25 nm Z-Pitch with 10 nm Word Line Cells.

S. Rachidi, Antonio Arreghini, Devin Verreck, G. L. Donadio, K. Banerjee, K. Katcko, Y. Oniki, Geert Van den Bosch, Maarten Rosmeulen

Proceedings of the IEEE International Memory Workshop, 2022

High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction.

Laurent Breuil, L. Nyns, S. Rachidi, K. Banerjee, Antonio Arreghini, J. P. Bastos, S. Ramesh, Geert Van den Bosch, Maarten Rosmeulen

Proceedings of the IEEE International Memory Workshop, 2022

2021

Reliability of Mo as Word Line Metal in 3D NAND.

Davide Tierno, Kristof Croes, Arjun Ajaykumar, Siva Ramesh, Geert Van den Bosch, Maarten Rosmeulen

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Impact of mechanical strain on wakeup of HfO2 ferroelectric memory.

Anastasiia Kruv, Sean R. C. McMitchell, Sergiu Clima, Oguzhan O. Okudur, Nicolo Ronchi, Geert Van den Bosch, Mario Gonzalez, Ingrid De Wolf, Jan Van Houdt

Proceedings of the IEEE International Reliability Physics Symposium, 2021

First demonstration of ferroelectric Si: HfO2 based 3D FE-FET with trench architecture for dense nonvolatile memory application.

K. Banerjee, Laurent Breuil, A. P. Milenin, M. Pak, J. Stiers, Sean R. C. McMitchell, L. Di Piazza, Geert Van den Bosch, Jan Van Houdt

Proceedings of the IEEE International Memory Workshop, 2021

2019

Impact of Mechanical Stress on the Electrical Performance of 3D NAND.

Anastasiia Kruv, Antonio Arreghini, Mario Gonzalez, Devin Verreck, Geert Van den Bosch, Ingrid De Wolf, Arnaud Furnémont

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2014

Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations.

Baojun Tang, Weidong Zhang, Laurent Breuil, Colin Robinson, Yunqi Wang, Maria Toledano-Luque, Geert Van den Bosch, Jianfu Zhang, Jan Van Houdt

Microelectron. Reliab., 2014

Assessment methodology of the lateral migration component in data retention of 3D SONOS memories.

Lifang Liu, Antonio Arreghini, Geert Van den Bosch, Liyang Pan, Jan Van Houdt

Microelectron. Reliab., 2014

2008

Reliability assessment of integrated power transistors: Lateral DMOS versus vertical DMOS.

Peter Moens, Geert Van den Bosch

Microelectron. Reliab., 2008

2004

Evidence for source side injection hot carrier effects on lateral DMOS transistors.

Stefano Aresu, Ward De Ceuninck, Geert Van den Bosch, Guido Groeseneken, Peter Moens, Jean Manca, D. Wojciechowski, P. Gassot

Microelectron. Reliab., 2004