Hubert Hody

According to our database1, Hubert Hody authored at least 8 papers between 2019 and 2024.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Links

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Bibliography

2024
Comprehensive Performance and Reliability Assessment of Se-based Selector-Only Memory.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023
Spin-orbit torque MRAM for ultrafast cache and neuromorphic computing applications.
Proceedings of the IEEE International Memory Workshop, 2023

2022
Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Enhanced performance and low-power capability of SiGeAsSe-GeSbTe 1S1R phase-change memory operated in bipolar mode.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Degradation mechanism of amorphous IGZO-based bipolar metal-semiconductor-metal selectors.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Device engineering guidelines for performance boost in IGZO front gated TFTs based on defect control.
Proceedings of the International Conference on IC Design and Technology, 2022

2021
Threshold switching in a-Si and a-Ge based MSM selectors and its implications for device reliability.
Proceedings of the IEEE International Memory Workshop, 2021

2019
Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM.
Proceedings of the 2019 Symposium on VLSI Circuits, Kyoto, Japan, June 9-14, 2019, 2019


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