Maximilian Lederer
Orcid: 0000-0002-1739-2747
According to our database1,
Maximilian Lederer
authored at least 23 papers
between 2020 and 2024.
Collaborative distances:
Collaborative distances:
Timeline
Legend:
Book In proceedings Article PhD thesis Dataset OtherLinks
Online presence:
-
on orcid.org
On csauthors.net:
Bibliography
2024
Ferroelectric Field Effect Transistors-Based Content-Addressable Storage-Class Memory: A Study on the Impact of Device Variation and High-Temperature Compatibility.
Adv. Intell. Syst., April, 2024
Improved Endurance Reliability of Ferroelectric Hafnium Oxide-Based BEoL Integrated MFM Capacitors.
Proceedings of the IEEE International Reliability Physics Symposium, 2024
Enhanced reliability and trapping behavior in ferroelectric FETs under cryogenic conditions.
Proceedings of the IEEE International Memory Workshop, 2024
2023
An Ultracompact Single-Ferroelectric Field-Effect Transistor Binary and Multibit Associative Search Engine.
Adv. Intell. Syst., July, 2023
Demonstration of Differential Mode Ferroelectric Field-Effect Transistor Array-Based in-Memory Computing Macro for Realizing Multiprecision Mixed-Signal Artificial Intelligence Accelerator.
Adv. Intell. Syst., June, 2023
Proceedings of the IEEE International Memory Workshop, 2023
Multi-Level Operation of Ferroelectric FET Memory Arrays for Compute-In-Memory Applications.
Proceedings of the IEEE International Memory Workshop, 2023
Ferroelectric HfO2/ZrO2 Superlattices with Improved Leakage at Bias and Temperature Stress.
Proceedings of the IEEE International Memory Workshop, 2023
Reconfigurable ferroelectric hafnium oxide FeFET fabricated in 28 nm CMOS technology for mmWave applications.
Proceedings of the 53rd IEEE European Solid-State Device Research Conference, 2023
2022
CoRR, 2022
Memory Array Demonstration of fully integrated 1T-1C FeFET concept with separated ferroelectric MFM device in interconnect layer.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
Machine Learning Assisted Statistical Variation Analysis of Ferroelectric Transistors: From Experimental Metrology to Predictive Modeling.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
Proceedings of the 19th International SoC Design Conference, 2022
Endurance improvements and defect characterization in ferroelectric FETs through interface fluorination.
Proceedings of the IEEE International Memory Workshop, 2022
Integration of BEoL Compatible 1T1C FeFET Memory Into an Established CMOS Technology.
Proceedings of the IEEE International Memory Workshop, 2022
Study of Nanosecond Laser Annealing on Silicon Doped Hafnium Oxide Film Crystallization and Capacitor Reliability.
Proceedings of the IEEE International Memory Workshop, 2022
Enablement of CMOS integrated sensor, harvesting and storage applications by ferroelectric HfO2.
Proceedings of the International Conference on IC Design and Technology, 2022
Interfacial Layer Engineering to Enhance Noise Immunity of FeFETs for IMC Applications.
Proceedings of the International Conference on IC Design and Technology, 2022
2021
High-Endurance and Low-Voltage operation of 1T1C FeRAM Arrays for Nonvolatile Memory Application.
Proceedings of the IEEE International Memory Workshop, 2021
2020
A Ferroelectric FET Based In-memory Architecture for Multi-Precision Neural Networks.
Proceedings of the 33rd IEEE International System-on-Chip Conference, 2020
Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
Proceedings of the 31st IEEE International Conference on Application-specific Systems, 2020