Raik Hoffmann

According to our database, Raik Hoffmann authored at least 15 papers between 2019 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Ferroelectric Field Effect Transistors-Based Content-Addressable Storage-Class Memory: A Study on the Impact of Device Variation and High-Temperature Compatibility.

Athira Sunil, Masud Rana SK, Maximilian Lederer, Yannick Raffel, Franz Müller, Ricardo Olivo, Raik Hoffmann, Konrad Seidel, Thomas Kämpfe, Bhaswar Chakrabarti, Sourav De

Adv. Intell. Syst., April, 2024

Improved Endurance Reliability of Ferroelectric Hafnium Oxide-Based BEoL Integrated MFM Capacitors.

Ayse Sünbül, David Lehninger, Raik Hoffmann, Hannes Mähne, Kerstin Bernert, Steffen Thiem, Thomas Kämpfe, Konrad Siedel, Maximilian Lederer, Lukas M. Eng

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Enhanced reliability and trapping behavior in ferroelectric FETs under cryogenic conditions.

Maximilian Lederer, Franz Müller, Raik Hoffmann, Ricardo Olivo, Yannick Raffel, Shouzhuo Yang, Sourav De, Roman Potjan, Oliver Ostien, Abdelrahman Altawil, Ayse Sünbül, David Lehninger, Thomas Kämpfe, Konrad Seidel

Proceedings of the IEEE International Memory Workshop, 2024

2023

Hafnium oxide-based Ferroelectric Memories: Are we ready for Application?

Konrad Seidel, David Lehninger, Franz Müller, Yannick Raffel, Ayse Sünbül, Ricardo Revello, Raik Hoffmann, Sourav De, Thomas Kämpfe, Maximilian Lederer

Proceedings of the IEEE International Memory Workshop, 2023

Multi-Level Operation of Ferroelectric FET Memory Arrays for Compute-In-Memory Applications.

Franz Müller, Sourav De, Maximilian Lederer, Raik Hoffmann, Ricardo Olivo, Thomas Kämpfe, Konrad Seidel, Tarek Ali, Halid Mulaosmanovic, Stefan Dünkel, Johannes Müller, Sven Beyer, Gerald Gerlach

Proceedings of the IEEE International Memory Workshop, 2023

2022

Memory Array Demonstration of fully integrated 1T-1C FeFET concept with separated ferroelectric MFM device in interconnect layer.

Konrad Seidel, David Lehninger, Raik Hoffmann, Tarek Ali, Maximilian Lederer, Ricardo Revello, Konstantin Mertens, Kati Biedermann, Yukai Shen, Defu Wang, Matthias Landwehr, Andreas Heinig, Thomas Kämpfe, Hannes Mähne, Kerstin Bernert, Steffen Thiem

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Reliability of Ferroelectric and Antiferroelectric Si: HfO2 materials in 3D capacitors by TDDB studies.

Alison Erlene Viegas, Konstantinos Efstathios Falidas, Tarek Nadi Ismail Ali, Kati Kühnel, Raik Hoffmann, Clemens Mart, Malte Czernohorsky, J. Heitmann

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Impact of Temperature on Reliability of MFIS HZO-based Ferroelectric Tunnel Junctions.

Ayse Sünbül, Tarek Ali, Raik Hoffmann, Ricardo Revello, Yannick Raffel, Pardeep Duhan, David Lehninger, Kati Kühnel, Matthias Rudolph, Sebastian Oehler, Philipp Schramm, Malte Czernohorsky, Konrad Seidel, Thomas Kämpfe, Lukas M. Eng

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Endurance improvements and defect characterization in ferroelectric FETs through interface fluorination.

Yannick Raffel, Ricardo Olivo, Maximilian Lederer, Franz Müller, Raik Hoffmann, Tarek Ali, Konstantin Mertens, Luca Pirro, Maximilian Drescher, Sven Beyer, Thomas Kämpfe, Konrad Seidel, Lukas M. Eng, J. Heitmann

Proceedings of the IEEE International Memory Workshop, 2022

Integration of BEoL Compatible 1T1C FeFET Memory Into an Established CMOS Technology.

David Lehninger, Hannes Mähne, Tarek Ali, Raik Hoffmann, Ricardo Olivo, Maximilian Lederer, Konstantin Mertens, Thomas Kämpfe, Kati Biedermann, Matthias Landwehr, Andreas Heinig, Defu Wang, Yukai Shen, Kerstin Bernert, Steffen Thiem, Konrad Seidel

Proceedings of the IEEE International Memory Workshop, 2022

Study of Nanosecond Laser Annealing on Silicon Doped Hafnium Oxide Film Crystallization and Capacitor Reliability.

Tarek Ali, Ricardo Olivo, S. Kerdilès, David Lehninger, Maximilian Lederer, Sourav De, A.-S. Royet, Ayse Sünbül, A. Prabhu, Kati Kühnel, Malte Czernohorsky, M. Rudolph, Raik Hoffmann, Christelle Charpin-Nicolle, Laurent Grenouillet, Thomas Kämpfe, Konrad Seidel

Proceedings of the IEEE International Memory Workshop, 2022

Interfacial Layer Engineering to Enhance Noise Immunity of FeFETs for IMC Applications.

Yannick Raffel, Sunanda Thunder, Maximilian Lederer, Ricardo Olivo, Raik Hoffmann, Luca Pirro, Sven Beyer, Talha Chohan, Po-Tsang Huang, Sourav De, Thomas Kämpfe, Konrad Seidel, Johannes Heitman

Proceedings of the International Conference on IC Design and Technology, 2022

2020

BEoL Reliability, XPS and REELS Study on low-k Dielectrics to understand Breakdown Mechanisms.

Betting Wehring, Raik Hoffmann, Lukas Gerlich, Malte Czernohorsky, Benjamin Uhlig, Robert Seidel, Tobias Barchewitz, Frank Schlaphof, Lutz Meinshausen, Christoph Leyens

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells.

Tarek Ali, Kati Kühnel, Malte Czernohorsky, Matthias Rudolph, Björn Pätzold, Ricardo Olivo, David Lehninger, Konstantin Mertens, Franz Müller, Maximilian Lederer, Raik Hoffmann, Clemens Mart, Mahsa N. Kalkani, Philipp Steinke, Thomas Kämpfe, Johannes Müller, Jan Van Houdt, Konrad Seidel, Lukas M. Eng

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Gate Stack Optimization Toward Disturb-Free Operation of Ferroelectric HSO based FeFET for NAND Applications.

Konrad Seidel, Kati Biedermann, Jan Van Houdt, Tarek Ali, Raik Hoffmann, Kati Kühnel, Malte Czernohorsky, Matthias Rudolph, Björn Pätzold, Philipp Steinke, K. Zimmermann

Proceedings of the 19th Non-Volatile Memory Technology Symposium, 2019