Yiming Qu

Orcid: 0000-0002-9255-1875

According to our database1, Yiming Qu authored at least 15 papers between 2018 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Bibliography

2024
Physical Study of Low-frequency TDDB Lifetime Deterioration in Advanced FinFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance $(> 10^{14})$ of HfZrO Anti-ferroelectrics for DRAM Applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

Impact of Hot Carrier Degradation and Bias Temperature Instability on GHz Cycle-to-Cycle Variation in Ultra-Scaled FinFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023
Multimedia teaching resource allocation method for distance online education based on packet cluster mapping.
Int. J. Inf. Commun. Technol., 2023

GHz AC to DC TDDB Modeling with Defect Accumulation Efficiency Model.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

GHz Cycle-to-Cycle Variation in Ultra-scaled FinFETs: From the Time-Zero to the Aging States.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Interval time dependent wake-up effect of HfZrO ferroelectric capacitor.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022
Universal Hot Carrier Degradation Model under DC and AC Stresses.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

GHz C-V Characterization Methodology and Its Application for Understanding Polarization Behaviors in High-k Dielectric Films.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Degradation Behaviors of 22 nm FDSOI CMOS Inverter Under Gigahertz AC Stress.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021
Nano-scaled transistor reliability characterization at nano-second regime.
Sci. China Inf. Sci., 2021

2020
In-Situ Monitoring of Self-Heating Effect in Aggressively Scaled FinFETs and Its Quantitative Impact on Hot Carrier Degradation Under Dynamic Circuit Operation.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019
Probing Write Error Rate and Random Telegraph Noise of MgO Based Magnetic Tunnel Juction Using a High Throughput Characterization System.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018
Sub-1 ns characterization methodology for transistor electrical parameter extraction.
Microelectron. Reliab., 2018

Effect of measurement speed (μs-800 ps) on the characterization of reliability behaviors for FDSOI nMOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2018


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