Fanyu Liu

According to our database, Fanyu Liu authored at least 9 papers between 2012 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

A Novel NH₃ Sensing Mechanism Based on Au Pads Activated Schottky Barrier MOSFET on Silicon-on-Insulator With Extremely High Sensitivity at Room Temperature.

Kai Xiao, Haihua Wang, Hui Xie, Siyuan Li, Zekun Zhao, Ziyue Cui, Qiumeng Chen, Peng Zhou, Fanyu Liu, Yong Xu, Yu-Long Jiang, Jing Wan

IEEE Trans. Instrum. Meas., 2024

Research on the Latch-Up Mechanism of DSOI at High Temperature.

Yuchen Wu, Fanyu Liu, Bo Li, Jiangjiang Li, Siyuan Chen, Yang Huang, Jiamin Li, Tiexin Zhang, Jing Wan, Yong Xu

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

On the Ion Line Calibration by Plasma Line in ISR Measurements.

Xinan Yue, Fanyu Liu, Junyi Wang, Yonghui Wang, Yihui Cai, Feng Ding, Baiqi Ning, Mingyuan Li, Ning Zhang, Zhongqiu Wang, Su Xu

Remote. Sens., March, 2023

The Effects of $\gamma$ Radiation-Induced Trapped Charges on Single Event Transient in DSOI Technology.

Yuchong Wang, Siyuan Chen, Fanyu Liu, Bo Li, Jiangjiang Li, Yang Huang, Tiexin Zhang, Xu Zhang, Zhengsheng Han, Tianchun Ye, Jing Wan

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Single Event Induced Crosstalk of Monolithic 3D Circuits Based on a 22 nm FD-SOI Technology.

Junjun Zhang, Fanyu Liu, Bo Li, Yang Huang, Siyuan Chen, Yuchong Wang, Jiajun Luo, Jing Wan

Proceedings of the IEEE International Reliability Physics Symposium, 2022

The Synergetic Effects of Total Ionizing Dose and High Temperature on 180 nm DSOI Technology.

Xu Zhang, Fanyu Liu, Bo Li, Siyuan Chen, Yang Huang, Jiangjiang Li, Jian Jiao, Tianchun Ye, Jiajun Luo

Proceedings of the IEEE Asia Pacific Conference on Circuit and Systems, 2022

2021

Nano-scaled transistor reliability characterization at nano-second regime.

Ran Cheng, Ying Sun, Yiming Qu, Wei Liu, Fanyu Liu, Jianfeng Gao, Nuo Xu, Bing Chen

Sci. China Inf. Sci., 2021

2015

Back-gate effects and detailed characterization of junctionless transistor.

Mukta Singh Parihar, Fanyu Liu, Carlos Navarro, Sylvain Barraud, Maryline Bawedin, Irina Ionica, Abhinav Kranti, Sorin Cristoloveanu

Proceedings of the 45th European Solid State Device Research Conference, 2015

2012

Radiation hardened by design techniques to reduce single event transient pulse width based on the physical mechanism.

Jianjun Chen, Shuming Chen, Bin Liang, Biwei Liu, Fanyu Liu

Microelectron. Reliab., 2012