Siegfried F. Karg

According to our database, Siegfried F. Karg authored at least 15 papers between 2008 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

Highly Reproducible and CMOS-compatible VO2-based Oscillators for Brain-inspired Computing.

Olivier Maher, Roy Bernini, Nele Harnack, Bernd Gotsmann, Marilyne Sousa, Valeria Bragaglia, Siegfried F. Karg

CoRR, 2024

2023

How fast can vanadium dioxide neuron-mimicking devices oscillate? Physical mechanisms limiting the frequency of vanadium dioxide oscillators.

Stefania Carapezzi, Andrew Plews, Gabriele Boschetto, Ahmed Nejim, Siegfried F. Karg, Aida Todri

Neuromorph. Comput. Eng., September, 2023

Two-Layered Oscillatory Neural Networks with Analog Feedforward Majority Gate for Image Edge Detection Application.

Madeleine Abernot, Corentin Delacour, Ahmet Suna, J. Marty Gregg, Siegfried F. Karg, Aida Todri-Sanial

Proceedings of the IEEE International Symposium on Circuits and Systems, 2023

Solving optimization tasks power-efficiently exploiting VO2's phase-change properties with Oscillating Neural Networks.

Olivier Maher, Nele Harnack, Giacomo Indiveri, Marilyne Sousa, Bernd Gotsmann, Siegfried F. Karg

Proceedings of the Device Research Conference, 2023

2022

How Frequency Injection Locking Can Train Oscillatory Neural Networks to Compute in Phase.

Aida Todri-Sanial, Stefania Carapezzi, Corentin Delacour, Madeleine Abernot, Thierry Gil, Elisabetta Corti, Siegfried F. Karg, Juan Núñez, Manuel Jiménez Través, Maria J. Avedillo, Bernabé Linares-Barranco

IEEE Trans. Neural Networks Learn. Syst., 2022

2021

Insights Into the Dynamics of Coupled VO₂ Oscillators for ONNs.

Juan Núñez, José M. Quintana, Maria José Avedillo, Manuel Jiménez Través, Aida Todri-Sanial, Elisabetta Corti, Siegfried F. Karg, Bernabé Linares-Barranco

IEEE Trans. Circuits Syst. II Express Briefs, 2021

Advanced Design Methods From Materials and Devices to Circuits for Brain-Inspired Oscillatory Neural Networks for Edge Computing.

Stefania Carapezzi, Gabriele Boschetto, Corentin Delacour, Elisabetta Corti, Andrew Plews, Ahmed Nejim, Siegfried F. Karg, Aida Todri-Sanial

IEEE J. Emerg. Sel. Topics Circuits Syst., 2021

Multi-Scale Modeling and Simulation Flow for Oscillatory Neural Networks for Edge Computing.

Stefania Carapezzi, Corentin Delacour, Gabriele Boschetto, Elisabetta Corti, Madeleine Abernot, Ahmed Nejim, Thierry Gil, Siegfried F. Karg, Aida Todri-Sanial

Proceedings of the 19th IEEE International New Circuits and Systems Conference, 2021

Frequency Injection Locking-Controlled Oscillations for Synchronized Operations in VO2 Crossbar Devices.

Elisabetta Corti, Corentin Delacour, Aida Todri-Sanial, Siegfried F. Karg

Proceedings of the Device Research Conference, 2021

2020

Coupled VO2 oscillators circuit as analog first layer filter in convolutional neural networks.

Elisabetta Corti, Joaquin Antonio Cornejo Jimenez, Kham M. Niang, John Robertson, Kirsten E. Moselund, Bernd Gotsmann, Adrian M. Ionescu, Siegfried F. Karg

CoRR, 2020

2018

Resistive Coupled VO2 Oscillators for Image Recognition.

Elisabetta Corti, Bernd Gotsmann, Kirsten E. Moselund, Igor Stolichnov, Adrian M. Ionescu, Siegfried F. Karg

Proceedings of the 2018 IEEE International Conference on Rebooting Computing, 2018

2016

Ballistic transport and high thermopower in one-dimensional InAs nanowires.

Siegfried F. Karg, Vanessa Schaller, Andrew Gaul, Kirsten E. Moselund, Heinz Schmid, Bernd Gotsmann, Johannes Gooth, Heike Riel

Proceedings of the 46th European Solid-State Device Research Conference, 2016

2014

III-V semiconductor nanowires for future devices.

Heinz Schmid, B. M. Borg, Kirsten E. Moselund, Pratyush Das Kanungo, G. Signorello, Siegfried F. Karg, Philipp Mensch, Volker Schmidt, Heike Riel

Proceedings of the Design, Automation & Test in Europe Conference & Exhibition, 2014

2013

Electrical and thermoelectrical properties of gated InAs nanowires.

Philipp Mensch, Siegfried F. Karg, Bernd Gotsmann, Pratyush Das Kanungo, Volker Schmidt, Valentina Troncale, Heinz Schmid, Heike Riel

Proceedings of the European Solid-State Device Research Conference, 2013

2008

Transition-metal-oxide-based resistance-change memories.

Siegfried F. Karg, Gerhard Ingmar Meijer, J. Georg Bednorz, Charles T. Rettner, Alejandro G. Schrott, Eric A. Joseph, Chung Hon Lam, Markus Janousch, Urs Staub, Fabio LaMattina, Santos F. Alvarado, Daniel Widmer, Richard Stutz, Ute Drechsler, Daniele Caimi

IBM J. Res. Dev., 2008