Takashi Ando

According to our database, Takashi Ando authored at least 10 papers between 2015 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

General Statistical Model for Dielectric Breakdown Including Reverse Area Scaling - The Role of Area-Dependent Dynamic Competition.

Ernest Y. Wu, Takashi Ando, Paul Jamison

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2022

Filament Localization and Characterization in Hf02 ReRAM Cells using Laser Stimulation.

Franco Stellari, Ernest Y. Wu, Martin M. Frank, Leonidas E. Ocala, Takashi Ando, Peilin Song

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

2020

A Time Alignment Method for Multiple Sensing Systems with GNSS Timing and IMUs with Frame-Sync Input.

Takashi Ando, Tomoya Kitani

Proceedings of the 2020 IEEE International Conference on Pervasive Computing and Communications Workshops, 2020

2019

Zero-shifting Technique for Deep Neural Network Training on Resistive Cross-point Arrays.

Hyungjun Kim, Malte J. Rasch, Tayfun Gokmen, Takashi Ando, Hiroyuki Miyazoe, Jae-Joon Kim, John Rozen, Seyoung Kim

CoRR, 2019

Reliability Challenges with Materials for Analog Computing.

Eduard A. Cartier, Wanki Kim, Nanbo Gong, Tayfun Gokmen, Martin M. Frank, Douglas M. Bishop, Youngseok Kim, Seyoung Kim, Takashi Ando, Ernest Y. Wu, Praneet Adusumilli, John Rozen, Paul M. Solomon, Wilfried Haensch, Matthew J. BrightSky, Abu Sebastian, Geoffrey W. Burr, Vijay Narayanan

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

A Self-Powered Supply-Sensing Biosensor Platform Using Bio Fuel Cell and Low-Voltage, Low-Cost CMOS Supply-Controlled Ring Oscillator With Inductive-Coupling Transmitter for Healthcare IoT.

Kiichi Niitsu, Atsuki Kobayashi, Yuya Nishio, Kenya Hayashi, Kei Ikeda, Takashi Ando, Yudai Ogawa, Hiroyuki Kai, Matsuhiko Nishizawa, Kazuo Nakazato

IEEE Trans. Circuits Syst. I Regul. Pap., 2018

PBTI in InGaAs MOS capacitors with Al2O3/HfO2/TiN gate stacks: Interface-state generation.

Eduard Cartier, Martin M. Frank, Takashi Ando, John Rozen, Vijay Narayanan

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017

Electron mobility in thin In0.53Ga0.47As channel.

Eduard Cartier, Atreya Majumdar, K.-T. Lee, Takashi Ando, Martin M. Frank, John Rozen, Keith A. Jenkins, C. Liang, C.-W. Cheng, John Bruley, M. Hopstaken, Pranita Kerber, J.-B. Yau, X. Sun, R. T. Mo, Chun-Chen Yeh, Effendi Leobandung, Vijay Narayanan

Proceedings of the 47th European Solid-State Device Research Conference, 2017

Interface engineering of Si1-xGex gate stacks for high performance dual channel CMOS.

ChoongHyun Lee, Richard G. Southwick, Shogo Mochizuki, Paul Jamison, Ruqiang Bao, Rajan Pandey, Aniruddha Konar, Takashi Ando, Vijay Narayanan, Bala Haran, Hemanth Jagannathan

Proceedings of the 12th IEEE International Conference on ASIC, 2017

2015

High-mobility high-Ge-content Si1-xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width.

Pouya Hashemi, Takashi Ando, Karthik Balakrishnan, John Bruley, Sebastian U. Engelmann, John A. Ott, Vijay Narayanan, D.-G. Park, Renee T. Mo, Effendi Leobandung

Proceedings of the Symposium on VLSI Circuits, 2015