Ernest Y. Wu

According to our database1, Ernest Y. Wu authored at least 18 papers between 2002 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Bibliography

2024
Challenges of Gate Stack TDDB in Gate-All-Around Nanosheet Towards Further Scaling.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

A New Clustering-Function-Based Formulation of Temporal and Spatial Clustering Model Involving Area Scaling and its Application to Parameter Extraction.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

General Statistical Model for Dielectric Breakdown Including Reverse Area Scaling - The Role of Area-Dependent Dynamic Competition.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

2022
Quantum Mechanical Connection of Schottky Emission Process and Its implications on Breakdown Methodology and Conduction Modeling for BEOL Low-k Dielectrics.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

A Flexible and Inherently Self-Consistent Methodology for MOL/BEOL/MIMCAP TDDB Applications with Excessive Variability-Induced Degradation.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Filament Localization and Characterization in Hf02 ReRAM Cells using Laser Stimulation.
Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

2021
TDDB Reliability in Gate-All-Around Nanosheet.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

2019
Comprehensive Methodology for Multiple Spots Competing Progressive Breakdown for BEOL/FEOL Applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

Transformation of Ramped Current Stress VBDto Constant Voltage Stress TDDB TBD.
Proceedings of the IEEE International Reliability Physics Symposium, 2019


2018
Elapsed-time statistics of successive breakdown in the presence of variability for dielectric breakdown in BEOL/MOL/FEOL applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

2015
A critical analysis of sampling-based reconstruction methodology for dielectric breakdown systems (BEOL/MOL/FEOL).
Proceedings of the IEEE International Reliability Physics Symposium, 2015

2013
Improving and optimizing reliability in future technologies with high-κ dielectrics.
Proceedings of the 2013 International Symposium on VLSI Design, Automation, and Test, 2013

2005
Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability.
Microelectron. Reliab., 2005

2004
Voltage acceleration and t63.2 of 1.6-10 nm gate oxides.
Microelectron. Reliab., 2004

2003
Critical reliability challenges in scaling SiO<sub>2</sub>-based dielectric to its limit.
Microelectron. Reliab., 2003

Statistics of soft and hard breakdown in thin SiO<sub>2</sub> gate oxides.
Microelectron. Reliab., 2003

2002
CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics.
IBM J. Res. Dev., 2002


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