Kazuhiko Endo

According to our database, Kazuhiko Endo authored at least 19 papers between 2007 and 2020.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2020

Correction to "Analytical Thermal Model for Self-Heating in Advanced FinFET Devices With Implications for Design and Reliability".

Chuan Xu, Seshadri K. Kolluri, Kazuhiko Endo, Kaustav Banerjee

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2020

Analysis of charge-to-hot-carrier degradation in Ge pFinFETs.

Wataru Mizubayashi, Hiroshi Oka, Koichi Fukuda, Yuki Ishikawa, Kazuhiko Endo

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Post-Si Nano Device Technology.

Kazuhiko Endo

Proceedings of the 13th IEEE International Conference on ASIC, 2019

2017

Advanced FinFET technologies for boosting SRAM performance.

Kazuhiko Endo

Proceedings of the 12th IEEE International Conference on ASIC, 2017

2015

PBTI for N-type tunnel FinFETs.

Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda, Yongxun Liu, Takashi Matsukawa, Yuki Ishikawa, Kazuhiko Endo, Shin-ichi O'Uchi, Junichi Tsukada, Hiromi Yamauchi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Meishoku Masahara

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

2014

Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance.

Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Koichi Fukuda, Takashi Matsukawa, Kazuhiko Endo, Shin-ichi O'Uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota

Proceedings of the 44th European Solid State Device Research Conference, 2014

Variation behavior of tunnel-FETs originated from dopant concentration at source region and channel edge configuration.

Shinji Migita, Takashi Matsukawa, Takahiro Mori, Koichi Fukuda, Yukinori Morita, Wataru Mizubayashi, Kazuhiko Endo, Yongxun Liu, Shin-ichi O'Uchi, Meishoku Masahara, Hiroyuki Ota

Proceedings of the 44th European Solid State Device Research Conference, 2014

2013

Analytical Thermal Model for Self-Heating in Advanced FinFET Devices With Implications for Design and Reliability.

Chuan Xu, Seshadri K. Kolluri, Kazuhiko Endo, Kaustav Banerjee

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2013

Independent-Double-Gate FinFET SRAM Technology.

Kazuhiko Endo, Shin-ichi O'Uchi, Takashi Matsukawa, Yongxun Liu, Meishoku Masahara

IEICE Trans. Electron., 2013

Performance limit of parallel electric field tunnel FET and improvement by modified gate and channel configurations.

Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Akihito Tanabe, Koichi Fukuda, Takashi Matsukawa, Kazuhiko Endo, Shin-ichi O'Uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota

Proceedings of the European Solid-State Device Research Conference, 2013

Guidelines for symmetric threshold voltage in tunnel FinFETs with single and dual metal gate electrodes.

Wataru Mizubayashi, Koichi Fukuda, Takahiro Mori, Kazuhiko Endo, Yongxun Liu, Takashi Matsukawa, Shin-ichi O'Uchi, Yuki Ishikawa, Shinji Migita, Yukinori Morita, Akihito Tanabe, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara, Hiroyuki Ota

Proceedings of the European Solid-State Device Research Conference, 2013

2012

High-Frequency Precise Characterization of Intrinsic FinFET Channel.

Hideo Sakai, Shin-ichi O'Uchi, Takashi Matsukawa, Kazuhiko Endo, Yongxun Liu, Junichi Tsukada, Yuki Ishikawa, Tadashi Nakagawa, Toshihiro Sekigawa, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara, Hiroki Ishikuro

IEICE Trans. Electron., 2012

A 0.7-V Opamp in Scaled Low-Standby-Power FinFET Technology.

Shin-ichi O'Uchi, Kazuhiko Endo, Takashi Matsukawa, Yongxun Liu, Tadashi Nakagawa, Yuki Ishikawa, Junichi Tsukada, Hiromi Yamauchi, Toshihiro Sekigawa, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara

IEICE Trans. Electron., 2012

2010

Work-function variation induced fluctuation in bias-temperature-instability characteristics of emerging metal-gate devices and implications for digital design.

Seid Hadi Rasouli, Kazuhiko Endo, Kaustav Banerjee

Proceedings of the 2010 International Conference on Computer-Aided Design, 2010

0.5V FinFET SRAM with dynamic threshold control of pass gates for salvaging malfunctioned bits.

Shin-ichi O'Uchi, Kazuhiko Endo, Yongxun Liu, Tadashi Nakagawa, Takashi Matsukawa, Yuki Ishikawa, Junichi Tsukada, Hiromi Yamauchi, Toshihiro Sekigawa, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara

Proceedings of the 36th European Solid-State Circuits Conference, 2010

Realization of 0.7-V analog circuits by adaptive-Vt operation of FinFET.

Shin-ichi O'Uchi, Kazuhiko Endo, Yongxun Liu, Tadashi Nakagawa, Takashi Matsukawa, Yuki Ishikawa, Junichi Tsukada, Toshihiro Sekigawa, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara

Proceedings of the IEEE Custom Integrated Circuits Conference, 2010

2009

Variability analysis of FinFET-based devices and circuits considering electrical confinement and width quantization.

Seid Hadi Rasouli, Kazuhiko Endo, Kaustav Banerjee

Proceedings of the 2009 International Conference on Computer-Aided Design, 2009

2008

FinFET-Based Flex-Vth SRAM Design for Drastic Standby-Leakage-Current Reduction.

Shin-ichi O'Uchi, Meishoku Masahara, Kazuhiko Endo, Yongxun Liu, Takashi Matsukawa, Kunihiro Sakamoto, Toshihiro Sekigawa, Hanpei Koike, Eiichi Suzuki

IEICE Trans. Electron., 2008

2007

Flex-Pass-Gate SRAM Design for Static Noise Margin Enhancement Using FinFET-Based Technology.

Shin-ichi O'Uchi, Meishoku Masahara, Kunihiro Sakamoto, Kazuhiko Endo, Yongxun Liu, Takashi Matsukawa, Toshihiro Sekigawa, Hanpei Koike, Eiichi Suzuki

Proceedings of the IEEE 2007 Custom Integrated Circuits Conference, 2007