Hyunsang Hwang

According to our database, Hyunsang Hwang authored at least 22 papers between 2004 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of three.

2024

Highly Scalable Vertical Bypass RRAM (VB-RRAM) for 3D V -NAND Memory.

Geonhui Han, Youngdong Kim, Jaeseon Kim, Dongmin Kim, Yoori Seo, Chuljun Lee, Jinmyung Choi, Jinwoo Lee, Dongho Ahn, Sechung Oh, Donghwa Lee, Hyunsang Hwang

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2023

Experimental Demonstration of Probabilistic-Bit (p-bit) Utilizing Stochastic Oscillation of Threshold Switch Device.

Seongjae Heo, Dongmin Kim, Wooseok Choi, Sanghyun Ban, Ohhyuk Kwon, Hyunsang Hwang

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Simple Binary In-Te OTS with Sub-nm HfOₓ Buffer Layer for 3D Vertical X-point Memory Applications.

Sanghyun Ban, Jangseop Lee, Taehoon Kim, Hyunsang Hwang

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2022

Improving the SiGeAsTe Ovonic Threshold Switching (OTS) Characteristics by Microwave Annealing for Excellent Endurance (> 10¹¹) and Low Drift Characteristics.

Jangseop Lee, Seonghun Kim, Sangmin Lee, Sanghyun Ban, Seongjae Heo, Donghwa Lee, Oleksandr Mosendz, Hyunsang Hwang

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Effects of an interfacial dead layer on the ferroelectric HfZrOx films for low thermal budget.

Seung-Yeol Oh, Hojung Jang, Hyunsang Hwang

Proceedings of the 20th Non-Volatile Memory Technology Symposium, 2022

2021

Ionic Sieving Through One-Atom-Thick 2D Material Enables Analog Nonvolatile Memory for Neuromorphic Computing.

Revannath Dnyandeo Nikam, Jongwon Lee, Wooseok Choi, Writam Banerjee, Myonghoon Kwak, Manoj Yadav, Hyunsang Hwang

CoRR, 2021

2019

Non-filamentary non-volatile memory elements as synapses in neuromorphic systems.

Alessandro Fumarola, Yusuf Leblebici, Pritish Narayanan, Robert M. Shelby, L. L. Sanchez, Geoffrey W. Burr, Kibong Moon, J. Jang, Hyunsang Hwang, Severin Sidler

Proceedings of the 19th Non-Volatile Memory Technology Symposium, 2019

2018

Thermally Stable Te-based Binary OTS Device for Selector Application.

Solomon Amsalu Chekol, Jongmyung Yoo, Hyunsang Hwang

Proceedings of the Non-Volatile Memory Technology Symposium, 2018

Tutorial 1 - ReRAM-based analog synapse devices for neuromorphic system.

Hyunsang Hwang

Proceedings of the 2018 International Conference on IC Design & Technology, 2018

2017

Automatic ReRAM SPICE Model Generation From Empirical Data for Fast ReRAM-Circuit Coevaluation.

JaeHyun Seo, Sangheon Lee, Kwangmin Kim, Sooeun Lee, Hyunsang Hwang, Byungsub Kim

IEEE Trans. Very Large Scale Integr. Syst., 2017

A multiscale modeling approach for the simulation of OxRRAM devices.

Andrea Padovani, Luca Larcher, Jiyong Woo, Hyunsang Hwang

Proceedings of the 17th Non-Volatile Memory Technology Symposium, 2017

Reducing circuit design complexity for neuromorphic machine learning systems based on Non-Volatile Memory arrays.

Pritish Narayanan, Lucas L. Sanches, Alessandro Fumarola, Robert M. Shelby, Stefano Ambrogio, Jun-Woo Jang, Hyunsang Hwang, Yusuf Leblebici, Geoffrey W. Burr

Proceedings of the IEEE International Symposium on Circuits and Systems, 2017

2016

Full chip integration of 3-d cross-point ReRAM with leakage-compensating write driver and disturbance-aware sense amplifier.

Sangheon Lee, Jeonghwan Song, Changhyuk Seong, Jiyong Woo, Jong-Moon Choi, Soon-Chan Kwon, Ho-Joon Kim, Hyun-Suk Kang, Soo Gil Kim, Hoe Gwon Jung, Kee-Won Kwon, Hyunsang Hwang

Proceedings of the 2016 IEEE Symposium on VLSI Circuits, 2016

Accelerating machine learning with Non-Volatile Memory: Exploring device and circuit tradeoffs.

Alessandro Fumarola, Pritish Narayanan, Lucas L. Sanches, Severin Sidler, Jun-Woo Jang, Kibong Moon, Robert M. Shelby, Hyunsang Hwang, Geoffrey W. Burr

Proceedings of the IEEE International Conference on Rebooting Computing, 2016

Large-scale neural networks implemented with Non-Volatile Memory as the synaptic weight element: Impact of conductance response.

Severin Sidler, Irem Boybat, Robert M. Shelby, Pritish Narayanan, Jun-Woo Jang, Alessandro Fumarola, Kibong Moon, Yusuf Leblebici, Hyunsang Hwang, Geoffrey W. Burr

Proceedings of the 46th European Solid-State Device Research Conference, 2016

2015

Neuromorphic Hardware System for Visual Pattern Recognition With Memristor Array and CMOS Neuron.

Myonglae Chu, Byoungho Kim, Sangsu Park, Hyunsang Hwang, Moongu Jeon, Byoung Hun Lee, Byung-Geun Lee

IEEE Trans. Ind. Electron., 2015

2014

Neuromorphic Character Recognition System With Two PCMO Memristors as a Synapse.

Ahmad Muqeem Sheri, Hyunsang Hwang, Moongu Jeon, Byung-Geun Lee

IEEE Trans. Ind. Electron., 2014

ReRAM-based synaptic device for neuromorphic computing.

Jun-Woo Jang, Sangsu Park, Yoon-Ha Jeong, Hyunsang Hwang

Proceedings of the IEEE International Symposium on Circuits and Systemss, 2014

Selector devices for 3-D cross-point ReRAM.

Euijun Cha, Jiyong Woo, Daeseok Lee, Sangheon Lee, Hyunsang Hwang

Proceedings of the IEEE International Symposium on Circuits and Systemss, 2014

2013

A two-step set operation for highly uniform resistive swtiching ReRAM by controllable filament.

Sangheon Lee, Daeseok Lee, Jiyong Woo, Euijun Cha, Hyunsang Hwang

Proceedings of the European Solid-State Device Research Conference, 2013

2005

The electronic structures and optical properties of BaTiO₃ and SrTiO₃ using first-principles calculations.

C. B. Samantaray, Hyunjun Sim, Hyunsang Hwang

Microelectron. J., 2005

2004

Electronic structures of high-k transition metal silicates: first-principles calculations.

C. B. Samantaray, Hyunjun Sim, Hyunsang Hwang

Microelectron. J., 2004