Electronic structures of high-k transition metal silicates: first-principles calculations. - C. B. Samantaray; Hyunjun Sim; Hyunsang Hwang (Microelectron. J., 2004)

The electronic structures and optical properties of BaTiO3 and SrTiO3 using first-principles calculations. - C. B. Samantaray; Hyunjun Sim; Hyunsang Hwang (Microelectron. J., 2005)

A two-step set operation for highly uniform resistive swtiching ReRAM by controllable filament. - Sangheon Lee; Daeseok Lee; Jiyong Woo; Euijun Cha; Hyunsang Hwang (ESSDERC, 2013)

Selector devices for 3-D cross-point ReRAM. - Euijun Cha; Jiyong Woo; Daeseok Lee; Sangheon Lee; Hyunsang Hwang (ISCAS, 2014)

ReRAM-based synaptic device for neuromorphic computing. - Jun-Woo Jang; Sangsu Park; Yoon-Ha Jeong; Hyunsang Hwang (ISCAS, 2014)

Neuromorphic Character Recognition System With Two PCMO Memristors as a Synapse. - Ahmad Muqeem Sheri; Hyunsang Hwang; Moongu Jeon; Byung-Geun Lee (IEEE Trans. Ind. Electron., 2014)

Neuromorphic Hardware System for Visual Pattern Recognition With Memristor Array and CMOS Neuron. - Myonglae Chu; Byoungho Kim; Sangsu Park; Hyunsang Hwang; Moongu Jeon; Byoung Hun Lee; Byung-Geun Lee (IEEE Trans. Ind. Electron., 2015)

Large-scale neural networks implemented with Non-Volatile Memory as the synaptic weight element: Impact of conductance response. - Severin Sidler; Irem Boybat; Robert M. Shelby; Pritish Narayanan; Jun-Woo Jang; Alessandro Fumarola; Kibong Moon; Yusuf Leblebici; Hyunsang Hwang; Geoffrey W. Burr (ESSDERC, 2016)

Accelerating machine learning with Non-Volatile Memory: Exploring device and circuit tradeoffs. - Alessandro Fumarola; Pritish Narayanan; Lucas L. Sanches; Severin Sidler; Jun-Woo Jang; Kibong Moon; Robert M. Shelby; Hyunsang Hwang; Geoffrey W. Burr (ICRC, 2016)

Full chip integration of 3-d cross-point ReRAM with leakage-compensating write driver and disturbance-aware sense amplifier. - Sangheon Lee; Jeonghwan Song; Changhyuk Seong; Jiyong Woo; Jong-Moon Choi; Soon-Chan Kwon; Ho-Joon Kim; Hyun-Suk Kang; Soo Gil Kim; Hoe Gwon Jung; Kee-Won Kwon; Hyunsang Hwang (VLSI Circuits, 2016)

Reducing circuit design complexity for neuromorphic machine learning systems based on Non-Volatile Memory arrays. - Pritish Narayanan; Lucas L. Sanches; Alessandro Fumarola; Robert M. Shelby; Stefano Ambrogio; Jun-Woo Jang; Hyunsang Hwang; Yusuf Leblebici; Geoffrey W. Burr (ISCAS, 2017)

A multiscale modeling approach for the simulation of OxRRAM devices. - Andrea Padovani; Luca Larcher; Jiyong Woo; Hyunsang Hwang (NVMTS, 2017)

Automatic ReRAM SPICE Model Generation From Empirical Data for Fast ReRAM-Circuit Coevaluation. - JaeHyun Seo; Sangheon Lee; Kwangmin Kim; Sooeun Lee; Hyunsang Hwang; Byungsub Kim (IEEE Trans. Very Large Scale Integr. Syst., 2017)

Tutorial 1 - ReRAM-based analog synapse devices for neuromorphic system. - Hyunsang Hwang (ICICDT, 2018)

Thermally Stable Te-based Binary OTS Device for Selector Application. - Solomon Amsalu Chekol; Jongmyung Yoo; Hyunsang Hwang (NVMTS, 2018)

Non-filamentary non-volatile memory elements as synapses in neuromorphic systems. - Alessandro Fumarola; Yusuf Leblebici; Pritish Narayanan; Robert M. Shelby; L. L. Sanchez; Geoffrey W. Burr; Kibong Moon; J. Jang; Hyunsang Hwang; Severin Sidler (NVMTS, 2019)

Ionic Sieving Through One-Atom-Thick 2D Material Enables Analog Nonvolatile Memory for Neuromorphic Computing. - Revannath Dnyandeo Nikam; Jongwon Lee; Wooseok Choi; Writam Banerjee; Myonghoon Kwak; Manoj Yadav; Hyunsang Hwang (CoRR, 2021)

Effects of an interfacial dead layer on the ferroelectric HfZrOx films for low thermal budget. - Seung-Yeol Oh; Hojung Jang; Hyunsang Hwang (NVMTS, 2022)

Improving the SiGeAsTe Ovonic Threshold Switching (OTS) Characteristics by Microwave Annealing for Excellent Endurance (> 1011) and Low Drift Characteristics. - Jangseop Lee; Seonghun Kim; Sangmin Lee; Sanghyun Ban; Seongjae Heo; Donghwa Lee; Oleksandr Mosendz; Hyunsang Hwang (VLSI Technology and Circuits, 2022)

Simple Binary In-Te OTS with Sub-nm HfOₓ Buffer Layer for 3D Vertical X-point Memory Applications. - Sanghyun Ban; Jangseop Lee; Taehoon Kim; Hyunsang Hwang (VLSI Technology and Circuits, 2023)

Experimental Demonstration of Probabilistic-Bit (p-bit) Utilizing Stochastic Oscillation of Threshold Switch Device. - Seongjae Heo; Dongmin Kim; Wooseok Choi; Sanghyun Ban; Ohhyuk Kwon; Hyunsang Hwang (VLSI Technology and Circuits, 2023)

Highly Scalable Vertical Bypass RRAM (VB-RRAM) for 3D V -NAND Memory. - Geonhui Han; Youngdong Kim; Jaeseon Kim; Dongmin Kim; Yoori Seo; Chuljun Lee; Jinmyung Choi; Jinwoo Lee; Dongho Ahn; Sechung Oh; Donghwa Lee; Hyunsang Hwang (VLSI Technology and Circuits, 2024)