Erik Bury
According to our database1,
Erik Bury
authored at least 37 papers
between 2012 and 2024.
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Bibliography
2024
Statistical Characterization of Off-State Stress Degradation in Planar HKMG nFETs Using Device Arrays.
Proceedings of the IEEE International Reliability Physics Symposium, 2024
Exploiting Bias Temperature Instability for Reservoir Computing in Edge Artificial Intelligence Applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2024
Demonstration of Chip Overclock Detection by Employing Tamper-Aware Odometer Technology.
Proceedings of the IEEE International Reliability Physics Symposium, 2024
Reducing Reservoir Dimensionality with Phase Space Construction for Simplified Hardware Implementation.
Proceedings of the Artificial Neural Networks and Machine Learning - ICANN 2024, 2024
2023
Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
Using dedicated device arrays for the characterization of TDDB in a scaled HK/MG technology.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
The Role of Mobility Degradation in the BTI-Induced RO Aging in a 28-nm Bulk CMOS Technology: (Student paper).
Proceedings of the IEEE International Reliability Physics Symposium, 2023
Proceedings of the IEEE International Reliability Physics Symposium, 2023
Proceedings of the IEEE International Reliability Physics Symposium, 2023
2022
Self-Heating in iN8-iN2 CMOS Logic Cells: Thermal Impact of Architecture (FinFET, Nanosheet, Forksheet and CFET) and Scaling Boosters.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
A Ring-Oscillator-Based Degradation Monitor Concept with Tamper Detection Capability.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer.
Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022
2021
Proceedings of the IEEE International Reliability Physics Symposium, 2021
Physics-based device aging modelling framework for accurate circuit reliability assessment.
Proceedings of the IEEE International Reliability Physics Symposium, 2021
The properties, effect and extraction of localized defect profiles from degraded FET characteristics.
Proceedings of the IEEE International Reliability Physics Symposium, 2021
2020
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020
2019
A Physically Unclonable Function Using Soft Oxide Breakdown Featuring 0% Native BER and 51.8 fJ/bit in 40-nm CMOS.
IEEE J. Solid State Circuits, 2019
Full (V<sub>g</sub>, V<sub>d</sub>) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2019
Array-Based Statistical Characterization of CMOS Degradation Modes and Modeling of the Time-Dependent Variability Induced by Different Stress Patterns in the {V<sub>G</sub>, V<sub>D</sub>} bias space.
Proceedings of the IEEE International Reliability Physics Symposium, 2019
2018
A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability.
Microelectron. Reliab., 2018
Hot electron and hot hole induced degradation of SiGe p-FinFETs studied by degradation maps in the entire bias space.
Proceedings of the IEEE International Reliability Physics Symposium, 2018
Proceedings of the IEEE International Reliability Physics Symposium, 2018
Proceedings of the IEEE International Reliability Physics Symposium, 2018
Experimental extraction of BEOL composite equivalent thermal conductivities for application in self-heating simulations.
Proceedings of the 48th European Solid-State Device Research Conference, 2018
A Physically Unclonable Function with 0% BER Using Soft Oxide Breakdown in 40nm CMOS.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2018
2015
Characterization of time-dependent variability using 32k transistor arrays in an advanced HK/MG technology.
Proceedings of the IEEE International Reliability Physics Symposium, 2015
Proceedings of the IEEE International Reliability Physics Symposium, 2015
NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures.
Proceedings of the IEEE International Reliability Physics Symposium, 2015
The defect-centric perspective of device and circuit reliability - From individual defects to circuits.
Proceedings of the 45th European Solid State Device Research Conference, 2015
2012
Proceedings of the 2012 European Solid-State Device Research Conference, 2012