Low-power DRAM-compatible Replacement Gate High-k/Metal Gate stacks. - Romain Ritzenthaler; Tom Schram; Erik Bury; Jérôme Mitard; L.-Å. Ragnarsson; Guido Groeseneken; N. Horiguchi; Aaron Thean; Alessio Spessot; Christian Caillat; V. Srividya; Pierre Fazan (ESSDERC, 2012)

The defect-centric perspective of device and circuit reliability - From individual defects to circuits. - Ben Kaczer; Jacopo Franco; Pieter Weckx; Philippe Roussel; Erik Bury; Moonju Cho; Robin Degraeve; Dimitri Linten; Guido Groeseneken; Halil Kukner; Praveen Raghavan; Francky Catthoor; et al. (ESSDERC, 2015)

NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures. - Jacopo Franco; Ben Kaczer; Philippe J. Roussel; Erik Bury; Hans Mertens; Romain Ritzenthaler; Tibor Grasser; Naoto Horiguchi; Aaron Thean; Guido Groeseneken (IRPS, 2015)

Origins and implications of increased channel hot carrier variability in nFinFETs. - Ben Kaczer; Jacopo Franco; M. Cho; Tibor Grasser; Philippe J. Roussel; Stanislav Tyaginov; M. Bina; Yannick Wimmer; Luis-Miguel Procel; Lionel Trojman; Felice Crupi; Gregory Pitner; et al. (IRPS, 2015)

Characterization of time-dependent variability using 32k transistor arrays in an advanced HK/MG technology. - Pieter Weckx; Ben Kaczer; C. Chen; Jacopo Franco; Erik Bury; Kausik Chanda; J. Watt; Philippe J. Roussel; Francky Catthoor; Guido Groeseneken (IRPS, 2015)

A Physically Unclonable Function with 0% BER Using Soft Oxide Breakdown in 40nm CMOS. - Kai-Hsin Chuang; Erik Bury; Robin Degraeve; Ben Kaczer; Dimitri Linten; Ingrid Verbauwhede (A-SSCC, 2018)

Experimental extraction of BEOL composite equivalent thermal conductivities for application in self-heating simulations. - Erik Bury; Ben Kaczer; Simon Van Beek; Dimitri Linten (ESSDERC, 2018)

Self-heating-aware CMOS reliability characterization using degradation maps. - Erik Bury; Adrian Vaisman Chasin; Ben Kaczer; Kai-Hsin Chuang; Jacopo Franco; Marko Simicic; Pieter Weckx; Dimitri Linten (IRPS, 2018)

A multi-bit/cell PUF using analog breakdown positions in CMOS. - Kai-Hsin Chuang; Erik Bury; Robin Degraeve; Ben Kaczer; T. Kallstenius; Guido Groeseneken; Dimitri Linten; Ingrid Verbauwhede (IRPS, 2018)

Hot electron and hot hole induced degradation of SiGe p-FinFETs studied by degradation maps in the entire bias space. - Jacopo Franco; Ben Kaczer; Adrian Vaisman Chasin; Erik Bury; Dimitri Linten (IRPS, 2018)

A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability. - Ben Kaczer; Jacopo Franco; Pieter Weckx; Philippe Roussel; Vamsi Putcha; Erik Bury; Marko Simicic; Adrian Vaisman Chasin; Dimitri Linten; Bertrand Parvais; Francky Catthoor; Gerhard Rzepa; et al. (Microelectron. Reliab., 2018)

Array-Based Statistical Characterization of CMOS Degradation Modes and Modeling of the Time-Dependent Variability Induced by Different Stress Patterns in the {VG, VD} bias space. - Erik Bury; Adrian Vaisman Chasin; Michiel Vandemaele; Simon Van Beek; Jacopo Franco; Ben Kaczer; Dimitri Linten (IRPS, 2019)

Full (Vg, Vd) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs. - Michiel Vandemaele; Ben Kaczer; Stanislav Tyaginov; Zlatan Stanojevic; Alexander Makarov; Adrian Vaisman Chasin; Erik Bury; Hans Mertens; Dimitri Linten; Guido Groeseneken (IRPS, 2019)

A Physically Unclonable Function Using Soft Oxide Breakdown Featuring 0% Native BER and 51.8 fJ/bit in 40-nm CMOS. - Kai-Hsin Chuang; Erik Bury; Robin Degraeve; Ben Kaczer; Dimitri Linten; Ingrid Verbauwhede (IEEE J. Solid State Circuits, 2019)

Relevance of fin dimensions and high-pressure anneals on hot-carrier degradation. - Adrian Vaisman Chasin; Jacopo Franco; Erik Bury; Romain Ritzenthaler; Eugenio Dentoni Litta; Alessio Spessot; Naoto Horiguchi; Dimitri Linten; Ben Kaczer (IRPS, 2020)

Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures. - Alexander Grill; Erik Bury; Jakob Michl; Stanislav Tyaginov; Dimitri Linten; Tibor Grasser; Bertrand Parvais; Ben Kaczer; Michael Waltl; Iuliana P. Radu (IRPS, 2020)

Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications. - Vamsi Putcha; Erik Bury; Jacopo Franco; Amey Walke; Simeng Zhao; Uthayasankaran Peralagu; Ming Zhao; AliReza Alian; Ben Kaczer; Niamh Waldron; Dimitri Linten; Bertrand Parvais; et al. (IRPS, 2020)

The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation. - Michiel Vandemaele; Kai-Hsin Chuang; Erik Bury; Stanislav Tyaginov; Guido Groeseneken; Ben Kaczer (IRPS, 2020)

The properties, effect and extraction of localized defect profiles from degraded FET characteristics. - Michiel Vandemaele; Ben Kaczer; Stanislav Tyaginov; Jacopo Franco; Robin Degraeve; Adrian Vaisman Chasin; Zhicheng Wu; Erik Bury; Yang Xiang; Hans Mertens; Guido Groeseneken (IRPS, 2021)

Physics-based device aging modelling framework for accurate circuit reliability assessment. - Zhicheng Wu; Jacopo Franco; Brecht Truijen; Philippe Roussel; Stanislav Tyaginov; Michiel Vandemaele; Erik Bury; Guido Groeseneken; Dimitri Linten; Ben Kaczer (IRPS, 2021)

A BSIM-Based Predictive Hot-Carrier Aging Compact Model. - Yang Xiang; Stanislav Tyaginov; Michiel Vandemaele; Zhicheng Wu; Jacopo Franco; Erik Bury; Brecht Truijen; Bertrand Parvais; Dimitri Linten; Ben Kaczer (IRPS, 2021)

Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer. - AliReza Alian; Raúl Rodríguez; Sachin Yadav 001; Uthayasankaran Peralagu; Arturo Sibaja Hernandez; Vamsi Putcha; Ming Zhao; Rana Y. El Kashlan; Bjorn Vermeersch; Hao Yu; Erik Bury; Ahmad Khaled; et al. (ESSDERC, 2022)

Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets. - Erik Bury; Adrian Vaisman Chasin; Ben Kaczer; Michiel Vandemaele; Stanislav Tyaginov; Jacopo Franco; Romain Ritzenthaler; Hans Mertens; Pieter Weckx; N. Horiguchi; Dimitri Linten (IRPS, 2022)

A Ring-Oscillator-Based Degradation Monitor Concept with Tamper Detection Capability. - Javier Diaz-Fortuny; Pablo Saraza-Canflanca; Erik Bury; Michiel Vandemaele; Ben Kaczer; Robin Degraeve (IRPS, 2022)

Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors. - Alexander Grill; V. John; Jakob Michl; A. Beckers; Erik Bury; Stanislav Tyaginov; Bertrand Parvais; Adrian Vaisman Chasin; Tibor Grasser; Michael Waltl; Ben Kaczer; Bogdan Govoreanu (IRPS, 2022)

Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors. - Stanislav Tyaginov; Alexander Makarov; Al-Moatasem Bellah El-Sayed; Adrian Vaisman Chasin; Erik Bury; Markus Jech; Michiel Vandemaele; Alexander Grill; An De Keersgieter; Mikhail I. Vexler; Geert Eneman; Ben Kaczer (IRPS, 2022)

Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs. - Michiel Vandemaele; Ben Kaczer; Stanislav Tyaginov; Erik Bury; Adrian Vaisman Chasin; Jacopo Franco; Alexander Makarov; Hans Mertens; Geert Hellings; Guido Groeseneken (IRPS, 2022)

Self-Heating in iN8-iN2 CMOS Logic Cells: Thermal Impact of Architecture (FinFET, Nanosheet, Forksheet and CFET) and Scaling Boosters. - Bjorn Vermeersch; Erik Bury; Yang Xiang; Pieter Schuddinck; Krishna K. Bhuwalka; Geert Hellings; Julien Ryckaert (VLSI Technology and Circuits, 2022)

Reliability challenges in Forksheet Devices: (Invited Paper). - Erik Bury; Michiel Vandemaele; Jacopo Franco; Adrian Chasin; Stanislav Tyaginov; A. Vandooren; Romain Ritzenthaler; Hans Mertens; Javier Diaz-Fortuny; N. Horiguchi; Dimitri Linten; Ben Kaczer (IRPS, 2023)

Improving the Tamper-Aware Odometer Concept by Enhancing Dynamic Stress Operation. - Javier Diaz-Fortuny; Dishant Sangani; Pablo Saraza-Canflanca; Erik Bury; Robin Degraeve; Ben Kaczer (IRPS, 2023)

The Role of Mobility Degradation in the BTI-Induced RO Aging in a 28-nm Bulk CMOS Technology: (Student paper). - Dishant Sangani; Javier Diaz-Fortuny; Erik Bury; Ben Kaczer; Georges G. E. Gielen (IRPS, 2023)

Using dedicated device arrays for the characterization of TDDB in a scaled HK/MG technology. - Pablo Saraza-Canflanca; Javier Diaz-Fortuny; Andrea Vici; Erik Bury; Robin Degraeve; Ben Kaczer (IRPS, 2023)

Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper. - Michiel Vandemaele; Ben Kaczer; Erik Bury; Jacopo Franco; Adrian Chasin; Alexander Makarov; Hans Mertens; Geert Hellings; Guido Groeseneken (IRPS, 2023)

Reducing Reservoir Dimensionality with Phase Space Construction for Simplified Hardware Implementation. - Yuanyang Guo; Robin Degraeve; Philippe Roussel; Ben Kaczer; Erik Bury; Ingrid Verbauwhede (ICANN (10), 2024)

Demonstration of Chip Overclock Detection by Employing Tamper-Aware Odometer Technology. - Javier Diaz-Fortuny; Pablo Saraza-Canflanca; Alex Romano-Molar; Erik Bury; Robin Degraeve; Ben Kaczer (IRPS, 2024)

Exploiting Bias Temperature Instability for Reservoir Computing in Edge Artificial Intelligence Applications. - Y. Guo; Robin Degraeve; Michiel Vandemaele; Pablo Saraza-Canflanca; Jacopo Franco; Ben Kaczer; Erik Bury; Ingrid Verbauwhede (IRPS, 2024)

Statistical Characterization of Off-State Stress Degradation in Planar HKMG nFETs Using Device Arrays. - Pablo Saraza-Canflanca; Dishant Sangani; Javier Diaz-Fortuny; Stanislav Tyaginov; Georges G. E. Gielen; Erik Bury; Ben Kaczer (IRPS, 2024)