Yinghui Zhong

Orcid: 0000-0001-9983-6729

Affiliations:

Zhengzhou University, School of Physics and Engineering, China

According to our database¹, Yinghui Zhong authored at least 4 papers between 2017 and 2024.

Collaborative distances:

Dijkstra number² of four.
Erdős number³ of three.

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2024

A behavioral model for electron irradiation effect on the DC performance in InP-based HEMT.

[BibT_eX]

[DOI]

Microelectron. J., 2024

Intrinsic point defects investigation in InAlAs with extrapolated defect transition level.

[BibT_eX]

[DOI]

Microelectron. J., 2024

2019

一种基于梯度提升回归树的系外行星宜居性预测方法 (Habitability Prediction of Exoplanets Based on GBRT Algorithm).

[BibT_eX]

[DOI]

计算机科学, 2019

2017

Two-step gate-recess process combining selective wet-etching and digital wet-etching for InAlAs/InGaAs InP-based HEMTs.

[BibT_eX]

[DOI]

Frontiers Inf. Technol. Electron. Eng., 2017

Yinghui Zhong

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