Souvik Mahapatra

Orcid: 0000-0002-4516-766X

Affiliations:
  • IIT Bombay, Mumbai, India


According to our database1, Souvik Mahapatra authored at least 27 papers between 2014 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Awards

IEEE Fellow

IEEE Fellow 2016, "For contributions to CMOS transistor gate stack reliability".

Timeline

Legend:

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Links

Online presence:

On csauthors.net:

Bibliography

2024
A TCAD to SPICE Framework for Isolation of BTI and HCD in GAA-SNS FETs and to Estimate Impact on RO Under Normal and Overclocking Conditions.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

Modeling of Post-Cycling Retention Bake in 3-D CTF TLC NAND Arrays.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

Comprehensive Time Dependent Dielectric Breakdown (TDDB) Characterization of Ferroelectric Capacitors Under Bipolar Stress Conditions.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

Modeling of Negative Bias Temperature Instability (NBTI) for Gate-All-Around (GAA) Stacked Nanosheet Technology.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

Comprehensive physics-based modeling of post-cycling long-term data retention in 176L 3-D NAND Flash Memories.
Proceedings of the IEEE International Memory Workshop, 2024

2023
A Physics-based Model for Long Term Data Retention Characteristics in 3D NAND Flash Memory.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022
On the PBTI Reliability of Low EOT Negative Capacitance 1.8 nm HfO2-ZrO2 Superlattice Gate Stack on Lg=90 nm nFETs.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Modeling Time and Bias Dependence of Classical HCD Mechanism (Peak ISUB Stress) in n-MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Decoupling of NBTI and Pure HCD Contributions in p-GAA SNS FETs Under Mixed VG/VD Stress.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021
A Theoretical Framework for Trap Generation and Passivation in NAND Flash Tunnel Oxide During Distributed Cycling and Retention Bake.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

Stochastic and Deterministic Modeling Frameworks for Time Kinetics of Gate Insulator Traps During and After Hot Carrier Stress in MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

Modeling of HKMG Stack Process Impact on Gate Leakage, SILC and PBTI.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

Analysis of Sheet Dimension (W, L) Dependence of NBTI in GAA-SNS FETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020
BTI and HCD Degradation in a Complete 32 × 64 bit SRAM Array - including Sense Amplifiers and Write Drivers - under Processor Activity.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Analysis of BTI, SHE Induced BTI and HCD Under Full VG/VD Space in GAA Nano-Sheet N and P FETs.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Analysis of The Hole Trapping Detrapping Component of NBTI Over Extended Temperature Range.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Hot Carrier Degradation in Cryo-CMOS.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019
Modeling the Interdependences Between Voltage Fluctuation and BTI Aging.
IEEE Trans. Very Large Scale Integr. Syst., 2019

On the Frequency Dependence of Bulk Trap Generation During AC Stress in Si and SiGe RMG P-FinFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018
Controversial issues in negative bias temperature instability.
Microelectron. Reliab., 2018

TCAD modeling for reliability.
Microelectron. Reliab., 2018

A review of NBTI mechanisms and models.
Microelectron. Reliab., 2018

Prediction of NBTI stress and recovery time kinetics in Si capped SiGe p-MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

2016
Aging-aware voltage scaling.
Proceedings of the 2016 Design, Automation & Test in Europe Conference & Exhibition, 2016

2015
Combined trap generation and transient trap occupancy model for time evolution of NBTI during DC multi-cycle and AC stress.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

Time dependent variability in RMG-HKMG FinFETs: Impact of extraction scheme on stochastic NBTI.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014
A comprehensive modeling framework for gate stack process dependence of DC and AC NBTI in SiON and HKMG p-MOSFETs.
Microelectron. Reliab., 2014


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