Michael L. Alles

Affiliations:
  • Vanderbilt University, Nashville, TN, USA


According to our database1, Michael L. Alles authored at least 9 papers between 2008 and 2024.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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PhD thesis 
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Links

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Bibliography

2024
Charge Trapping in Irradiated 3D Devices and ICs (Invited).
Proceedings of the IEEE International Reliability Physics Symposium, 2024

2021
Effects of Charge Generation and Trapping on the X-ray Response of Strained AlGaN/GaN HEMTs.
Proceedings of the 14th IEEE International Conference on ASIC, 2021

2019
Exploration of the Impact of Physical Integration Schemes on Soft Errors in 3D ICs Using Monte Carlo Simulation.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

2015
Multi-cell soft errors at the 16-nm FinFET technology node.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014
Total-ionizing-dose effects and reliability of carbon nanotube FET devices.
Microelectron. Reliab., 2014

2012
The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies.
Microelectron. Reliab., 2012

2011
The sensitivity of radiation-induced leakage to STI topology and sidewall doping.
Microelectron. Reliab., 2011

2008
Accurate numerical models for simulation of radiation events in nano-scale semiconductor devices.
Math. Comput. Simul., 2008

Multiscale Numerical Models for Simulation of Radiation Events in Semiconductor Devices.
Proceedings of the Computational Science, 2008


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