Kunyang Liu
Orcid: 0000-0002-9328-7076Affiliations:
- Waseda University, Shinjuku, Tokyo, Japan
According to our database1,
Kunyang Liu
authored at least 13 papers
between 2018 and 2024.
Collaborative distances:
Collaborative distances:
Timeline
Legend:
Book In proceedings Article PhD thesis Dataset OtherLinks
Online presence:
-
on orcid.org
On csauthors.net:
Bibliography
2024
A 0.116 pJ/bit Latch-Based True Random Number Generator Featuring Static Inverter Selection and Noise Enhancement.
IEEE Trans. Very Large Scale Integr. Syst., March, 2024
2023
Practical Markov Chain and Von Neumann based Post-processing Circuits for True Random Number Generators.
Proceedings of the 66th IEEE International Midwest Symposium on Circuits and Systems, 2023
A 100-Bit-Output Modeling Attack-Resistant SPN Strong PUF with Uniform and High-Randomness Response.
Proceedings of the IEEE Custom Integrated Circuits Conference, 2023
2022
A 0.186-pJ per Bit Latch-Based True Random Number Generator Featuring Mismatch Compensation and Random Noise Enhancement.
IEEE J. Solid State Circuits, 2022
A 0.116pJ/bit Latch-Based True Random Number Generator with Static Inverter Selection and Noise Enhancement.
Proceedings of the 2022 International Symposium on VLSI Design, Automation and Test, 2022
A 2.17-pJ/b 5b-Response Attack-Resistant Strong PUF with Enhanced Statistical Performance.
Proceedings of the 48th IEEE European Solid State Circuits Conference, 2022
2021
A 0.5-V Hybrid SRAM Physically Unclonable Function Using Hot Carrier Injection Burn-In for Stability Reinforcement.
IEEE J. Solid State Circuits, 2021
A 0.186-pJ per Bit Latch-Based True Random Number Generator with Mismatch Compensation and Random Noise Enhancement.
Proceedings of the 2021 Symposium on VLSI Circuits, Kyoto, Japan, June 13-19, 2021, 2021
36.3 A Modeling Attack Resilient Strong PUF with Feedback-SPN Structure Having <0.73% Bit Error Rate Through In-Cell Hot-Carrier Injection Burn-In.
Proceedings of the IEEE International Solid-State Circuits Conference, 2021
2020
A 373-F<sup>2</sup> 0.21%-Native-BER EE SRAM Physically Unclonable Function With 2-D Power-Gated Bit Cells and ${V}_{\text{SS}}$ Bias-Based Dark-Bit Detection.
IEEE J. Solid State Circuits, 2020
An Inverter-Based True Random Number Generator with 4-bit Von-Neumann Post-Processing Circuit.
Proceedings of the 63rd IEEE International Midwest Symposium on Circuits and Systems, 2020
A 0.5-V 2.07-fJ/b 497-F<sup>2</sup> EE/CMOS Hybrid SRAM Physically Unclonable Function with < 1E-7 Bit Error Rate Achieved through Hot Carrier Injection Burn-in.
Proceedings of the 2020 IEEE Custom Integrated Circuits Conference, 2020
2018
A 373 F<sup>2</sup> 2D Power-Gated EE SRAM Physically Unclonable Function With Dark-Bit Detection Technique.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2018