Gaudenzio Meneghesso

Orcid: 0000-0002-6715-4827

Affiliations:
  • University of Padova, Italy


According to our database1, Gaudenzio Meneghesso authored at least 140 papers between 2001 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Awards

IEEE Fellow

IEEE Fellow 2013, "For contributions to the reliability physics of compound semiconductors devices".

Timeline

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Links

Online presence:

On csauthors.net:

Bibliography

2024
Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

Charge Trapping in SiC MOSFETs under Constant Gate Current Stress: Analysis Based on Charge Pumping Measurements.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

$\mathrm{R}_{\text{ON}}$ and $\mathrm{V}_{\text{TH}}$ Extraction in Hard-Switched E-mode GaN HEMTs: Impact of Passivation and Layout.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

Role of Gate Hole Injection in Minimizing Substrate Coupling and Electron Trapping in AlGaN/GaN Power HEMTs.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023
Thermally-activated failure mechanisms of 0.25 \ \mu \mathrm{m}$ RF AIGaN/GaN HEMTs submitted to long-term life tests.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Trapping in $\text{Al}_{2}\mathrm{O}_{3}/\text{GaN}$ MOScaps investigated by fast capacitive techniques.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022
Modeling Hot-Electron Trapping in GaN-based HEMTs.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021
Full Optical Contactless Thermometry Based on LED Photoluminescence.
IEEE Trans. Instrum. Meas., 2021

Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

A Generalized Approach to Determine the Switching Reliability of GaN HEMTs on-Wafer Level.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

Vertical stack reliability of GaN-on-Si buffers for low-voltage applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

Current crowding as a major cause for InGaN LED degradation at extreme high current density.
Proceedings of the IECON 2021, 2021

Charge Trapping in GaN Power Transistors: Challenges and Perspectives.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021

2020
Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019
Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs).
Proceedings of the IEEE International Reliability Physics Symposium, 2019

Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

µs-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018
Study and Development of a Fluorescence Based Sensor System for Monitoring Oxygen in Wine Production: The WOW Project.
Sensors, 2018

Current induced degradation study on state of the art DUV LEDs.
Microelectron. Reliab., 2018

Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors.
Microelectron. Reliab., 2018

On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs.
Microelectron. Reliab., 2018

Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments.
Microelectron. Reliab., 2018

Failure limits and electro-optical characteristics of GaN-based LEDs under electrical overstress.
Microelectron. Reliab., 2018

Impact of dislocations on DLTS spectra and degradation of InGaN-based laser diodes.
Microelectron. Reliab., 2018

Positive and negative threshold voltage instabilities in GaN-based transistors.
Microelectron. Reliab., 2018

Degradation of GaN-on-GaN vertical diodes submitted to high current stress.
Microelectron. Reliab., 2018

Degradation mechanisms of heterogeneous III-V/Silicon loop-mirror laser diodes for photonic integrated circuits.
Microelectron. Reliab., 2018

Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs.
Microelectron. Reliab., 2018

On the origin of the leakage current in p-gate AlGaN/GaN HEMTs.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

Degradation of vertical GaN FETs under gate and drain stress.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017
Field and hot electron-induced degradation in GaN-based power MIS-HEMTs.
Microelectron. Reliab., 2017

Long-term stresses on linear micromirrors for pico projector application.
Microelectron. Reliab., 2017

Degradation of InGaN-based MQW solar cells under 405 nm laser excitation.
Microelectron. Reliab., 2017

Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level.
Microelectron. Reliab., 2017

Understanding the degradation processes of GaN based LEDs submitted to extremely high current density.
Microelectron. Reliab., 2017

Long-term degradation of InGaN-based laser diodes: Role of defects.
Microelectron. Reliab., 2017

2016
Degradation of InGaN laser diodes caused by temperature- and current-driven diffusion processes.
Microelectron. Reliab., 2016

Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis.
Microelectron. Reliab., 2016

Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure.
Microelectron. Reliab., 2016

Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate.
Microelectron. Reliab., 2016

Degradation of InGaN-based LEDs related to charge diffusion and build-up.
Microelectron. Reliab., 2016

Experimental observation of TDDB-like behavior in reverse-biased green InGaN LEDs.
Microelectron. Reliab., 2016

2015
Effects of thermal and electrical stress on DH4T-based organic thin-film-transistors with PMMA gate dielectrics.
Microelectron. Reliab., 2015

Failure causes and mechanisms of retrofit LED lamps.
Microelectron. Reliab., 2015

Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs.
Microelectron. Reliab., 2015

Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects.
Microelectron. Reliab., 2015

Long-term degradation mechanisms of mid-power LEDs for lighting applications.
Microelectron. Reliab., 2015

Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs.
Microelectron. Reliab., 2015

Effects and exploitation of tunable white light for circadian rhythm and human-centric lighting.
Proceedings of the 1st IEEE International Forum on Research and Technologies for Society and Industry Leveraging a better tomorrow, 2015

Analysis of the mechanisms limiting the reliability of retrofit LED lamps.
Proceedings of the 1st IEEE International Forum on Research and Technologies for Society and Industry Leveraging a better tomorrow, 2015

Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

Degradation mechanisms of dye-sensitized solar cells: Light, bias and temperature effects.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

Stress-induced instabilities of shunt paths in high efficiency MWT solar cells.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

Trapping induced parasitic effects in GaN-HEMT for power switching applications.
Proceedings of the 2015 International Conference on IC Design & Technology, 2015

2014
Stress-induced degradation of p- and n-type organic thin-film-transistors in the ON and OFF states.
Microelectron. Reliab., 2014

Proton induced trapping effect on space compatible GaN HEMTs.
Microelectron. Reliab., 2014

Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications.
Microelectron. Reliab., 2014

Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage.
Microelectron. Reliab., 2014

Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs.
Microelectron. Reliab., 2014

ESD degradation and robustness of RGB LEDs and modules: An investigation based on combined electrical and optical measurements.
Microelectron. Reliab., 2014

ESD on GaN-based LEDs: An analysis based on dynamic electroluminescence measurements and current waveforms.
Microelectron. Reliab., 2014

Traps localization and analysis in GaN HEMTs.
Microelectron. Reliab., 2014

Reliability Investigation of GaN HEMTs for MMICs Applications.
Micromachines, 2014

Effects of constant voltage stress on organic complementary logic inverters.
Proceedings of the 44th European Solid State Device Research Conference, 2014

Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences.
Proceedings of the 44th European Solid State Device Research Conference, 2014

High performance high reliability AlN/GaN DHFET.
Proceedings of the 44th European Solid State Device Research Conference, 2014

Breakdown investigation in GaN-based MIS-HEMT devices.
Proceedings of the 44th European Solid State Device Research Conference, 2014

Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs.
Proceedings of the 44th European Solid State Device Research Conference, 2014

Reliability of capacitive RF MEMS switches subjected to repetitive impact cycles at different temperatures.
Proceedings of the 44th European Solid State Device Research Conference, 2014

2013
Effects of constant voltage stress on p- and n-type organic thin film transistors with poly(methyl methacrylate) gate dielectric.
Microelectron. Reliab., 2013

ESD characterization of multi-chip RGB LEDs.
Microelectron. Reliab., 2013

Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes.
Microelectron. Reliab., 2013

Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate.
Microelectron. Reliab., 2013

Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics.
Microelectron. Reliab., 2013

"Hot-plugging" of LED modules: Electrical characterization and device degradation.
Microelectron. Reliab., 2013

Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications.
Microelectron. Reliab., 2013

Thermal and electrical investigation of the reverse bias degradation of silicon solar cells.
Microelectron. Reliab., 2013

Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs.
Microelectron. Reliab., 2013

Comparison between positive and negative constant current stress on dye-sensitized solar cells.
Microelectron. Reliab., 2013

Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors.
Proceedings of the European Solid-State Device Research Conference, 2013

2012
Single- and double-heterostructure GaN-HEMTs devices for power switching applications.
Microelectron. Reliab., 2012

Enhanced permanent degradation of organic TFT under electrical stress and visible light exposure.
Microelectron. Reliab., 2012

Indirect techniques for channel temperature estimation of HEMT microwave transistors: Comparison and limits.
Microelectron. Reliab., 2012

K-band capacitive MEMS switches on GaAs substrate: Design, fabrication, and reliability.
Microelectron. Reliab., 2012

Reliability improvement in microstructures by reducing the impact velocity through electrostatic force modulation.
Microelectron. Reliab., 2012

Chip and package-related degradation of high power white LEDs.
Microelectron. Reliab., 2012

Reliability issues in GaN-based light-emitting diodes: Effect of dc and PWM stress.
Microelectron. Reliab., 2012

IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors.
Microelectron. Reliab., 2012

Phosphors for LED-based light sources: Thermal properties and reliability issues.
Microelectron. Reliab., 2012

Editorial.
Microelectron. Reliab., 2012

Field plate related reliability improvements in GaN-on-Si HEMTs.
Microelectron. Reliab., 2012

Reliability study of dye-sensitized solar cells by means of solar simulator and white LED.
Microelectron. Reliab., 2012

2011
Degradation of InGaN lasers: Role of non-radiative recombination and injection efficiency.
Microelectron. Reliab., 2011

ESD sensitivity of a GaAs MMIC microwave power amplifier.
Microelectron. Reliab., 2011

Investigation methods and approaches for alleviating charge trapping phenomena in ohmic RF-MEMS switches submitted to cycling test.
Microelectron. Reliab., 2011

Degradation mechanisms of high-power white LEDs activated by current and temperature.
Microelectron. Reliab., 2011

An active heat-based restoring mechanism for improving the reliability of RF-MEMS switches.
Microelectron. Reliab., 2011

Thermal stress effects on Dye-Sensitized Solar Cells (DSSCs).
Microelectron. Reliab., 2011

2010
Time-To-Latch-Up investigation of SCR devices as ESD protection structures on 65 nm technology platform.
Microelectron. Reliab., 2010

Study of the actuation speed, bounces occurrences, and contact reliability of ohmic RF-MEMS switches.
Microelectron. Reliab., 2010

Reliability evaluation for Blu-Ray laser diodes.
Microelectron. Reliab., 2010

Defect-related degradation of Deep-UV-LEDs.
Microelectron. Reliab., 2010

Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress.
Microelectron. Reliab., 2010

Enhancement of RF-MEMS switch reliability through an active anti-stiction heat-based mechanism.
Microelectron. Reliab., 2010

Thermal and electrical stress effects of electrical and optical characteristics of Alq3/NPD OLED.
Microelectron. Reliab., 2010

2009
Reliability analysis of InGaN Blu-Ray laser diode.
Microelectron. Reliab., 2009

Breakdown characterization of gate oxides in 35 and 70 Å BCD8 smart power technology.
Microelectron. Reliab., 2009

Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test.
Microelectron. Reliab., 2009

2008
Electrical characterization and reliability study of HEMTs on composite substrates under high electric fields.
Microelectron. Reliab., 2008

Thermal storage effects on AlGaN/GaN HEMT.
Microelectron. Reliab., 2008

2007
Holding voltage investigation of advanced SCR-based protection structures for CMOS technology.
Microelectron. Reliab., 2007

High temperature electro-optical degradation of InGaN/GaN HBLEDs.
Microelectron. Reliab., 2007

Characterization and analysis of trap-related effects in AlGaN-GaN HEMTs.
Microelectron. Reliab., 2007

2006
High brightness GaN LEDs degradation during dc and pulsed stress.
Microelectron. Reliab., 2006

Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors.
Microelectron. Reliab., 2006

Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate.
IEICE Electron. Express, 2006

2005
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues.
Microelectron. Reliab., 2005

A novel fast and versatile temperature measurement system for LDMOS transistors.
Microelectron. Reliab., 2005

2004
Hot carrier aging degradation phenomena in GaN based MESFETs.
Microelectron. Reliab., 2004

Characterization of self-heating effects in semiconductor resistors during transmission line pulses.
Microelectron. Reliab., 2004

2003
Optimization of ESD protection structures suitable for BCD6 smart power technology.
Microelectron. Reliab., 2003

Reliability of visible GaN LEDs in plastic package.
Microelectron. Reliab., 2003

2002
ESD protection structures for 20 V and 40 V power supply suitable for BCD6 smart power technology.
Microelectron. Reliab., 2002

Failure modes and mechanisms of InP-based and metamorphic high electron mobility transistors.
Microelectron. Reliab., 2002

Backside Failure Analysis of GaAs ICs after ESD tests.
Microelectron. Reliab., 2002

2001
ESD protection structures for BCD5 smart power technologies.
Microelectron. Reliab., 2001

Investigation on ESD-stressed GaN/InGaN-on-sapphire blue LEDs.
Microelectron. Reliab., 2001

Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs.
Microelectron. Reliab., 2001


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