Fengbin Tian

According to our database, Fengbin Tian authored at least 2 papers between 2023 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Role of Nitrogen in Suppressing Interfacial States Generation and Improving Endurance in Ferroelectric Field Effect Transistors.

Saifei Dai, Songwei Li, Shuangshuang Xu, Fengbin Tian, Junshuai Chai, Jiahui Duan, Wenjuan Xiong, Jinjuan Xiang, Yanrong Wang, Hao Xu, Jing Zhang, Xiaolei Wang, Wenwu Wang

Proceedings of the IEEE International Memory Workshop, 2024

2023

Comprehensive Study of Endurance Fatigue in the Scaled Si FeFET by in-situ Vth Measurement and Endurance Enhancement Strategy.

Xianzhou Shao, Junshuai Chai, Min Liao, Jiahui Duan, Fengbin Tian, Xiaoyu Ke, Xiaoqing Sun, Hao Xu, Jinjuan Xiang, Xiaolei Wang, Wenwu Wang

Proceedings of the IEEE International Memory Workshop, 2023