Daniel J. Lichtenwalner

Orcid: 0000-0002-6324-6118

According to our database1, Daniel J. Lichtenwalner authored at least 11 papers between 2018 and 2024.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2024
Measurement of the $D_{it}$ Changes Under BTI-Stress in 4H-SiC FETs Using the Subthreshold Slope Method.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

Characterization of Interface Trap Density in SiC MOSFETs Subjected to High Voltage Gate Stress.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

Hole-Induced Threshold Voltage Instability Under High Positive and Negative Gate Stress in SiC MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023
High Temperature and High Humidity Reliability Evaluation of Large-Area 1200V and 1700V SiC Diodes.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Lifetime Modeling of the 4H-SiC MOS Interface in the HTRB Condition Under the Influence of Screw Dislocations.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Modeling of the Snappy, and Soft Reverse Recovery of SiC MOSFET's Body Diode.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

2022
Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

2020
Leakage Currents and E' Centers in 4H-SiC MOSFETs with Barium Passivation.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019
Reliability and Performance Issues in SiC MOSFETs: Insight Provided by Spin Dependent Recombination.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018
Reliability studies of SiC vertical power MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

The effects of radiation on the terrestrial operation of SiC MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2018


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