Daniel Christopher Worledge

According to our database, Daniel Christopher Worledge authored at least 7 papers between 2006 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Write-error-rate of Spin-Transfer-Torque MRAM (Invited).

Daniel Christopher Worledge

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Reliable Sub-nanosecond MRAM with Double Spin-torque Magnetic Tunnel Junctions.

C. Safranski, Guohan Hu, J. Z. Sun, P. Hashemi, S. L. Brown, L. Buzi, C. P. D'Emic, E. R. J. Edwards, Eileen A. Galligan, M. G. Gottwald, O. Gunawan, S. Karimeddiny, H. Jung, J. Kim, Kenneth F. Latzko, Philip Louis Trouilloud, S. Zare, Daniel Christopher Worledge

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Spin-Transfer-Torque MRAM: the Next Revolution in Memory.

Daniel Christopher Worledge

Proceedings of the IEEE International Memory Workshop, 2022

2017

Low-current Spin Transfer Torque MRAM.

Guohan Hu, J. J. Nowak, G. Lauer, J. H. Lee, J. Z. Sun, J. Harms, A. Annunziata, S. Brown, W. Chen, Y. H. Kim, N. Marchack, S. Murthy, Chandrasekharan Kothandaraman, Eugene J. O'Sullivan, J. H. Park, M. Reuter, R. P. Robertazzi, Philip Louis Trouilloud, Y. Zhu, Daniel Christopher Worledge

Proceedings of the 2017 International Symposium on VLSI Design, Automation and Test, 2017

2006

Single-domain model for toggle MRAM.

Daniel Christopher Worledge

IBM J. Res. Dev., 2006

Two-level BEOL processing for rapid iteration in MRAM development.

Michael C. Gaidis, Eugene J. O'Sullivan, Janusz Jozef Nowak, Yu Lu, Sivananda K. Kanakasabapathy, Philip Louis Trouilloud, Daniel Christopher Worledge, Solomon Assefa, Keith R. Milkove, George P. Wright, William J. Gallagher

IBM J. Res. Dev., 2006

Rapid-turnaround characterization methods for MRAM development.

David William Abraham, Philip Louis Trouilloud, Daniel Christopher Worledge

IBM J. Res. Dev., 2006