Aurore Constant

According to our database, Aurore Constant authored at least 5 papers between 2014 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited).

William Vandendaele, Camille Leurquin, R. Lavieville, Marie-Anne Jaud, Abygaël Viey, Romain Gwoziecki, B. Mohamad, E. Nowak, Aurore Constant, Ferdinando Iucolano

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Drain voltage impact on charge redistribution in GaN-on-Si E-mode MOSc-HEMTs.

Camille Leurquin, William Vandendaele, Romain Gwoziecki, B. Mohamad, G. Despesse, Ferdinando Iucolano, Roberto Modica, Aurore Constant

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Novel High Voltage Bias Temperature Instabilities (HV-BTI) setup to monitor RON/VTH drift on GaN-on-Si E-mode MOSc-HEMTs under drain voltage.

Camille Leurquin, William Vandendaele, Aby-Gaël Viey, Romain Gwoziecki, René Escoffier, R. Salot, G. Despesse, Ferdinando Iucolano, Roberto Modica, Aurore Constant

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2015

Technology and design of GaN power devices.

Peter Moens, Abhishek Banerjee, P. Coppens, Aurore Constant, Piet Vanmeerbeek, Z. Li, F. Declercq, L. De Schepper, H. De Vleeschouwer, C. Liu, B. Padmanabhan, W. Jeon, J. Guo, A. Salih, Marnix Tack

Proceedings of the 45th European Solid State Device Research Conference, 2015

2014

A positive impact of low proton irradiation energy on oxynitride gate 4H-SiC MOSFETs.

Matthieu Florentin, José Millán, Philippe Godignon, Mihaela Alexandru, Aurore Constant, Bernd Schmidt

Proceedings of the 44th European Solid State Device Research Conference, 2014