Arnulf Leuther

Orcid: 0000-0002-4369-591X

According to our database1, Arnulf Leuther authored at least 24 papers between 2004 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Bibliography

2024
Methodology to Accurately Replicate a Non-Planar Thin-Film Microstrip BEOL in 3D EM Simulation.
Proceedings of the IEEE Radio and Wireless Symposium, 2024

Broadband InGaAs mHEMT THz Transmitters and Receivers.
Proceedings of the Optical Fiber Communications Conference and Exhibition, 2024

2023
Ultra-Low-Noise 50-nm InGaAs mHEMT Technology and MMICs for Room Temperature and Cryogenic Applications.
Proceedings of the IEEE International Geoscience and Remote Sensing Symposium, 2023

InGaAs HEMT Technology for Submillimeter-Wave and Ultra-Wideband Monolithic Integrated Circuits.
Proceedings of the IEEE International Geoscience and Remote Sensing Symposium, 2023

Advanced mHEMT Technologies for Use in Radar, Communication and Meteorological Applications.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

Multi-Channel PA, LNA, and Switch MMICs for Beam-Switching Applications at 160 GHz, Based on an InGaAs mHEMT Technology.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

2021
First Demonstration of Distributed Amplifier MMICs With More Than 300-GHz Bandwidth.
IEEE J. Solid State Circuits, 2021

2020
Frequency Multiplier and Mixer MMICs Based on a Metamorphic HEMT Technology Including Schottky Diodes.
IEEE Access, 2020

2019
20-nm In<sub>0.8</sub>Ga<sub>0.2</sub>As MOSHEMT MMIC Technology on Silicon.
IEEE J. Solid State Circuits, 2019

Broadband 240-GHz Radar for Non-Destructive Testing of Composite Materials.
IEEE J. Solid State Circuits, 2019

2018
High Gain 220 - 275 GHz Amplifier MMICs Based on Metamorphic 20 nm InGaAs MOSFET Technology.
Proceedings of the 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018

Integrated 220-260 GHz Radar Frontend.
Proceedings of the 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018

2015
Towards MMIC-Based 300GHz Indoor Wireless Communication Systems.
IEICE Trans. Electron., 2015

2014
MMIC-based module-level frequency generation for e-band communication systems.
Proceedings of the 2014 IEEE Radio and Wireless Symposium, 2014

Multi-gigabit data transmission using MMIC-based E-band frontends.
Proceedings of the 2014 IEEE Radio and Wireless Symposium, 2014

Wireless communications on THz carriers takes shape.
Proceedings of the 16th International Conference on Transparent Optical Networks, 2014

2012
Multibias scalable HEMT small-signal modeling based on a hybrid direct extraction/particle swarm optimization approach.
Microelectron. J., 2012

Millimeter-Wave Monolithic Integrated Circuits and Modules for Safety and Security Applications.
Proceedings of the Future Security - 7th Security Research Conference, 2012

Broadband Active Integrated Circuits for Terahertz Communication.
Proceedings of the European Wireless 2012, 2012

2011
Metamorphic HEMT MMICs and Modules Operating Between 300 and 500 GHz.
IEEE J. Solid State Circuits, 2011

W-band radiometer system with switching front-end for multi-load calibration.
Proceedings of the 2011 IEEE International Geoscience and Remote Sensing Symposium, 2011

2010
A 120-145 GHz Heterodyne Receiver Chipset Utilizing the 140 GHz Atmospheric Window for Passive Millimeter-Wave Imaging Applications.
IEEE J. Solid State Circuits, 2010

2008
Metamorphic HEMT MMICs and Modules for Use in a High-Bandwidth 210 GHz Radar.
IEEE J. Solid State Circuits, 2008

2004
Reliability of 70 nm metamorphic HEMTs.
Microelectron. Reliab., 2004


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