Akshay M. Arabhavi

Orcid: 0000-0001-9299-1670

According to our database1, Akshay M. Arabhavi authored at least 10 papers between 2018 and 2024.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2024
Type-II GaInAsSb/InP Modified Uni-Traveling Carrier Photodiodes Under Zero-Bias Operation.
Proceedings of the Optical Fiber Communications Conference and Exhibition, 2024

2023
SPICE Modeling in Verilog-A for Photo-Response in UTC-Photodiodes Targeting Beyond-5G Circuit Design.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., September, 2023

High-Power Performance of Type-II GaInAsSb/InP Uniform Absorber Uni-Traveling Carrier Photodiodes.
Proceedings of the Optical Fiber Communications Conference and Exhibition, 2023

Multi-Finger 250-nm InP/GaAsSb DHBTs with Record 37.3 % Class-A PAE at 94 GHz.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

Thermal Characterization of InP/GaAsSb DHBTs: Effect of Emitter and Collector Layers.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

2022
Highly-Linear InP/GaAsSb DHBTs with 18.2 dBm OIP3 at 45 GHz: Comparison of Common-Base and Common-Emitter Structures.
Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022

InP/GaAsSb DHBTs: THz Analog Performance and Record 180-Gb/s 5.5Vppd-Swing PAM-4 DAC-Driver.
Proceedings of the 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2022

2019
InP/GaAsSb DHBT Power Performance with 30% Class-A PAE at 94 GHz.
Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

2018
Iterative De-Embedding and Extracted Maximum Oscillation Frequency f<sub>MAX</sub> in mm-Wave InP DHBTs: Impact of Device Dimensions on Extraction Errors.
Proceedings of the 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018

Scaling of InP/GaAsSb DHBTs: A Simultaneous f<sub>T</sub>/f<sub>MAX</sub>=463/829GHz in a 10µm Long Emitter.
Proceedings of the 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018


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