Zuopu Zhou
Orcid: 0000-0003-4812-8524
According to our database1,
Zuopu Zhou
authored at least 16 papers
between 2021 and 2024.
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Bibliography
2024
Unveiling Cryogenic Performance (4 to 300 K) Towards Ultra-Thin Ferroelectric HZO: Novel Kinetic Barrier Engineering and Underlying Mechanism.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024
Unveiling the Impact of AC PBTI on Hydrogen Formation in Oxide Semiconductor Transistors.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024
2023
First Study of the Charge Trapping Aggravation Induced by Anti-Ferroelectric Switching in the MFIS Stack.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
Non-Destructive-Read 1T1C Ferroelectric Capacitive Memory Cell with BEOL 3D Monolithically Integrated IGZO Access Transistor for 4F<sup>2</sup> High-Density Integration.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
First Demonstration of Work Function-Engineered BEOL-Compatible IGZO Non-Volatile MFMIS AFeFETs and Their Co-Integration with Volatile-AFeFETs.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
Grain Size Reduction of Ferroelectric HZO Enabled by a Novel Solid Phase Epitaxy (SPE) Approach: Working Principle, Experimental Demonstration, and Theoretical Understanding.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
First Demonstration of BEOL-Compatible MFMIS Fe-FETs with 3D Multi-Fin Floating Gate: In-situ ALD-deposited MFM, LCH of 50 nm, > 2×10<sup>9</sup> Endurance, and 58.3% Area Saving.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
First Demonstration of BEOL-Compatible Write-Enhanced Ferroelectric-Modulated Diode (FMD): New Possibility for Oxide Semiconductor Memory Devices.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
First Demonstration of BEOL-compatible Amorphous InGaZnOx Channel Antiferroelectric (Hf0.2Zr0.8O2)-Enhanced Floating Gate Memory.
Proceedings of the International Conference on IC Design and Technology, 2023
2022
Experimental Demonstration of An Inversion-Type Ferroelectric Capacitive Memory and its 1 kbit Crossbar Array Featuring High CHCS/CLCS, Fast Speed, and Long Retention.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
Boosting the Memory Window of the BEOL-Compatible MFMIS Ferroelectric/ Anti-Ferroelectric FETs by Charge Injection.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
First Demonstration of Fully CMOS-compatible Non-volatile Programmable Photonic Switch Enabled by Ferroelectric-SOI Waveguide for Next Generation Photonic Integrated Circuit.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
BEOL-compatible Ta/HZO/W Ferroelectric Tunnel Junction with Low Operating Voltage Targeting for Low Power Application.
Proceedings of the International Conference on IC Design and Technology, 2022
2021
Fault Diagnosis of Steel Wire Ropes Based on Magnetic Flux Leakage Imaging Under Strong Shaking and Strand Noises.
IEEE Trans. Ind. Electron., 2021