Zoubir Khatir

According to our database, Zoubir Khatir authored at least 26 papers between 2003 and 2018.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of five.

2018

Effect of power cycling tests on traps under the gate of Al₂O₃/AlGaN/GaN normally-ON devices.

Malika Elharizi, Fadi Zaki, Ali Ibrahim, Zoubir Khatir, Jean-Pierre Ousten

Microelectron. Reliab., 2018

Analysis of the degradation mechanisms occurring in the topside interconnections of IGBT power devices during power cycling.

Nausicaa Dornic, Ali Ibrahim, Zoubir Khatir, Son-Ha Tran, Jean-Pierre Ousten, Jeffrey Ewanchuk, Stefan Mollov

Microelectron. Reliab., 2018

2016

Power cycling issues and challenges of SiC-MOSFET power modules in high temperature conditions.

Ali Ibrahim, Jean-Pierre Ousten, Richard Lallemand, Zoubir Khatir

Microelectron. Reliab., 2016

Control strategy for extreme conditions regenerative braking of a hybrid energy storage system for an electric vehicle.

Khaled Itani, Alexandre De Bernardinis, Zoubir Khatir, Ahmad Jammal, Mohamad Oueidat

Proceedings of the 14th IEEE International Conference on Industrial Informatics, 2016

Energy management of a battery-flywheel storage system used for regenerative braking recuperation of an Electric Vehicle.

Khaled Itani, Alexandre De Bernardinis, Zoubir Khatir, Ahmad Jammal

Proceedings of the IECON 2016, 2016

2015

Temperature mapping by μ-Raman spectroscopy over cross-section area of power diode in forward biased conditions.

Thierry Kociniewski, Jeff Moussodji, Zoubir Khatir

Microelectron. Reliab., 2015

Mechanical and thermal stresses characterization maps on cross-sections of forward biased electronic power devices.

Thierry Kociniewski, Zoubir Khatir

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Part-load control stategy of a 20kW SiC power converter for embedded PEMFC multi-stack architectures.

Abdelfatah Kolli, Alexandre De Bernardinis, Zoubir Khatir, Arnaud Gaillard, Olivier Bethoux, Daniel Hissel

Proceedings of the IECON 2015, 2015

2014

Solder void position and size effects on electro thermal behaviour of MOSFET transistors in forward bias conditions.

Son-Ha Tran, Laurent Dupont, Zoubir Khatir

Microelectron. Reliab., 2014

μ-Raman spectroscopy for stress analysis in high power silicon devices.

Thierry Kociniewski, Jeff Moussodji, Zoubir Khatir

Microelectron. Reliab., 2014

2013

Reliability of power MOSFET-based smart switches under normal and extreme conditions for 24 V battery system applications.

Gilles Rostaing, Mounira Berkani, D. Mechouche, Denis Labrousse, Stéphane Lefebvre, Zoubir Khatir, Philippe Dupuy

Microelectron. Reliab., 2013

Robustness of 1.2 kV SiC MOSFET devices.

D. Othman, Stéphane Lefebvre, Mounira Berkani, Zoubir Khatir, Ali Ibrahim, A. Bouzourene

Microelectron. Reliab., 2013

Distributed electro-thermal model of IGBT chip - Application to top-metal ageing effects in short circuit conditions.

Jeff Moussodji, Thierry Kociniewski, Zoubir Khatir

Microelectron. Reliab., 2013

2012

Comparison study on performances and robustness between SiC MOSFET & JFET devices - Abilities for aeronautics application.

D. Othman, M. Bouarroudj-Berkani, Stéphane Lefebvre, Ali Ibrahim, Zoubir Khatir, A. Bouzourene

Microelectron. Reliab., 2012

2011

Ageing and Failure Modes of IGBT Modules in High-Temperature Power Cycling.

Vanessa Smet, François Forest, Jean-Jacques Huselstein, Frédéric Richardeau, Zoubir Khatir, Stéphane Lefebvre, Mounira Berkani

IEEE Trans. Ind. Electron., 2011

Investigations of thermal interfaces aging under thermal cycling conditions for power electronics applications.

Jean-Pierre Ousten, Zoubir Khatir

Microelectron. Reliab., 2011

2010

Investigations on junction temperature estimation based on junction voltage measurements.

Zoubir Khatir, Laurent Dupont, Ali Ibrahim

Microelectron. Reliab., 2010

Ageing of SiC JFET transistors under repetitive current limitation conditions.

M. Bouarroudj-Berkani, D. Othman, Stéphane Lefebvre, S. Moumen, Zoubir Khatir, T. Ben Sallah

Microelectron. Reliab., 2010

2009

Characterisation of power modules ceramic substrates for reliability aspects.

S. Pietranico, S. Pommier, Stéphane Lefebvre, Zoubir Khatir, S. Bontemps

Microelectron. Reliab., 2009

Estimation of SiC JFET temperature during short-circuit operations.

Mounira Berkani, Stéphane Lefebvre, Narjes Boughrara, Zoubir Khatir, Jean-Claude Faugières, Peter Friedrichs, Ali Haddouche

Microelectron. Reliab., 2009

2007

Experimental and numerical investigations on delayed short-circuit failure mode of single chip IGBT devices.

Zoubir Khatir, Stéphane Lefebvre, F. Saint-Eve

Microelectron. Reliab., 2007

Failure modes on low voltage power MOSFETs under high temperature application.

Laurent Dupont, Stéphane Lefebvre, M. Bouaroudj, Zoubir Khatir, Jean-Claude Faugières

Microelectron. Reliab., 2007

Degradation behavior of 600 V-200 A IGBT modules under power cycling and high temperature environment conditions.

M. Bouarroudj, Zoubir Khatir, Jean-Pierre Ousten, F. Badel, Laurent Dupont, Stéphane Lefebvre

Microelectron. Reliab., 2007

2006

Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling.

Laurent Dupont, Zoubir Khatir, Stéphane Lefebvre, S. Bontemps

Microelectron. Reliab., 2006

2004

Boundary element analysis of thermal fatigue effects on high power IGBT modules.

Zoubir Khatir, Stéphane Lefebvre

Microelectron. Reliab., 2004

2003

Experimental validation of a thermal modelling method dedicated to multichip power modules in operating conditions.

S. Carubelli, Zoubir Khatir

Microelectron. J., 2003