Zongyang Hu

According to our database1, Zongyang Hu authored at least 7 papers between 2018 and 2025.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

2018
2019
2020
2021
2022
2023
2024
2025
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In proceedings 
Article 
PhD thesis 
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Links

On csauthors.net:

Bibliography

2025
A human-inspired slow-fast dual-branch method for product quality prediction of complex manufacturing processes with hierarchical variations.
Adv. Eng. Informatics, 2025

2023
GaN HEMTs Design and Modeling for 5G.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

2019
Field-plated Ga2O3 Trench Schottky Barrier Diodes with a Record High Figure-of-merit of 0.78 GW/cm<sup>2</sup>.
Proceedings of the Device Research Conference, 2019

Barrier Height Stability and Reverse Leakage Mechanisms in Ni/Ga2O3 (001) Schottky Barrier Diodes.
Proceedings of the Device Research Conference, 2019

2018
Degradation of GaN-on-GaN vertical diodes submitted to high current stress.
Microelectron. Reliab., 2018

1.5 kV Vertical Ga2O3 Trench-MIS Schottky Barrier Diodes.
Proceedings of the 76th Device Research Conference, 2018

Realization of the First GaN Based Tunnel Field-Effect Transistor.
Proceedings of the 76th Device Research Conference, 2018


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