Zixuan Sun
Orcid: 0000-0002-8257-5531
According to our database1,
Zixuan Sun
authored at least 13 papers
between 2023 and 2024.
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Bibliography
2024
A 4-bit Calibration-Free Computing-In-Memory Macro With 3T1C Current-Programed Dynamic-Cascode Multi-Level-Cell eDRAM.
IEEE J. Solid State Circuits, March, 2024
OS<sup>3</sup>Flow: Optical and SAR Image Registration Using Symmetry-Guided Semi-Dense Optical Flow.
IEEE Geosci. Remote. Sens. Lett., 2024
Deep Learning-Assisted Trap Extraction Method from Noise Power Spectral Density for MOSFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2024
Sub-20-nm DRAM Technology under Negative Bias Temperature Instability (NBTI): from Characterization to Physical Origin Identification.
Proceedings of the IEEE International Reliability Physics Symposium, 2024
New Insights into the Random Telegraph Noise (RTN) in FinFETs at Cryogenic Temperature.
Proceedings of the IEEE International Reliability Physics Symposium, 2024
Investigation of Interplays between Body Biasing and Hot Carrier Degradation (HCD) in Advanced NMOS FinFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2024
Accelerating Device-Circuit Self-Heating Simulations with Dynamic Time Evolution for GAAFET.
Proceedings of the IEEE International Reliability Physics Symposium, 2024
Proceedings of the IEEE International Conference on Acoustics, 2024
Segment Anything Model Guided Semantic Knowledge Learning For Remote Sensing Change Detection.
Proceedings of the IEEE International Conference on Acoustics, 2024
2023
Catching the Missing EM Consequence in Soft Breakdown Reliability in Advanced FinFETs: Impacts of Self-heating, On-State TDDB, and Layout Dependence.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
Double-sided Row Hammer Effect in Sub-20 nm DRAM: Physical Mechanism, Key Features and Mitigation.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
Investigation of Hot Carrier Enhanced Body Bias Effect in Advanced FinFET Technology.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
A Calibration-Free 15-level/Cell eDRAM Computing-in-Memory Macro with 3T1C Current-Programmed Dynamic-Cascoded MLC achieving 233-to-304-TOPS/W 4b MAC.
Proceedings of the IEEE Custom Integrated Circuits Conference, 2023