Zhuoqing Yu

According to our database, Zhuoqing Yu authored at least 2 papers between 2017 and 2018.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2018

New insights into the HCI degradation of pass-gate transistor in advanced FinFET technology.

Pengpeng Ren, Changze Liu, Sanping Wan, Jiayang Zhang, Zhuoqing Yu, Nie Liu, Yongsheng Sun, Runsheng Wang, Canhui Zhan, Zhenghao Gan, Waisum Wong, Yu Xia, Ru Huang

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017

Towards reliability-aware circuit design in nanoscale FinFET technology: - New-generation aging model and circuit reliability simulator.

Shaofeng Guo, Runsheng Wang, Zhuoqing Yu, Peng Hao, Pengpeng Ren, Yangyuan Wang, Siyu Liao, Chunyi Huang, Tianlei Guo, Alvin Chen, Jushan Xie, Ru Huang

Proceedings of the 2017 IEEE/ACM International Conference on Computer-Aided Design, 2017