Zhongshan Zheng

According to our database, Zhongshan Zheng authored at least 4 papers between 2014 and 2019.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2019

Influences of the Source and Drain Resistance of the MOSFETs on the Single Event Upset Hardness of SRAM cells.

Zhongshan Zheng, Zhentao Li, Bo Li, Jiajun Luo, Zhengsheng Han

Proceedings of the 13th IEEE International Conference on ASIC, 2019

2018

Process variation dependence of total ionizing dose effects in bulk nFinFETs.

Bo Li, Yunbo Huang, Ling Yang, Qingzhu Zhang, Zhongshan Zheng, Binhong Li, Huiping Zhu, Jianhui Bu, Huaxiang Yin, Jiajun Luo, Zhengsheng Han, Haibin Wang

Microelectron. Reliab., 2018

2017

Roles of the gate length and width of the transistors in increasing the single event upset resistance of SRAM cells.

Zhongshan Zheng, Zhentao Li, Gengsheng Chen, Jiajun Luo, Zhengsheng Han

Proceedings of the 12th IEEE International Conference on ASIC, 2017

2014

Unfolded/tightened mechanism series support design based on characteristics of flying snake spine.

Zuhui Jiang, Baolin Feng, Shibiao Zhao, Zhongshan Zheng, Lu Li, Kexuan Li

Proceedings of the 2014 IEEE International Conference on Robotics and Biomimetics, 2014