Zhitang Song
Orcid: 0000-0001-7859-9429
According to our database1,
Zhitang Song
authored at least 57 papers
between 2007 and 2024.
Collaborative distances:
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Bibliography
2024
IEEE Trans. Very Large Scale Integr. Syst., October, 2024
A Power-On-Reset Circuit With Accurate Trigger-Point Voltage and Ultralow Typical Quiescent Current for Emerging Nonvolatile Memory.
IEEE Trans. Very Large Scale Integr. Syst., August, 2024
A Subthreshold Adaptive-Reference Leakage- Compensation Sensing Scheme for 3D PCM With Enhanced Sensing Margin and Endurance.
IEEE Trans. Circuits Syst. I Regul. Pap., August, 2024
High PSR external capacitor-less LDO with adaptive supply-ripple cancellation technique.
Int. J. Circuit Theory Appl., August, 2024
IEEE Trans. Circuits Syst. II Express Briefs, February, 2024
Reversible and Irreversible Polarization Degradation of Hf0.5Zr0.5O2 Capacitors with Coherent Structural Transition at Elevated Temperatures.
Proceedings of the IEEE International Reliability Physics Symposium, 2024
2023
A high PSR and high-precision current-mode bandgap reference with g<sub>m</sub> boost self-regulated structure.
Microelectron. J., December, 2023
Sci. China Inf. Sci., October, 2023
IEICE Trans. Inf. Syst., August, 2023
A Self-Organizing Multi-Layer Agent Computing System for Behavioral Clustering Recognition.
Sensors, 2023
IEICE Electron. Express, 2023
Proceedings of the IEEE International Symposium on Circuits and Systems, 2023
2022
Ultrathin HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> bilayer based reliable 1T1R RRAM electronic synapses with low power consumption for neuromorphic computing.
Neuromorph. Comput. Eng., December, 2022
Neuromorph. Comput. Eng., December, 2022
Frontiers Neurorobotics, September, 2022
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2022
A Fast-Transient-Response NMOS LDO with Wide Load-Capacitance Range for Cross-Point Memory.
Sensors, 2022
Atomic visualization of the emergence of orthorhombic phase in Hf0.5Zr0.5O2 ferroelectric film with in-situ rapid thermal annealing.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022
2021
IEEE Trans. Circuits Syst. II Express Briefs, 2021
2020
BIST-Based Fault Diagnosis for PCM With Enhanced Test Scheme and Fault-Free Region Finding Algorithm.
IEEE Trans. Very Large Scale Integr. Syst., 2020
A self-start circuit with asymmetric inductors reconfigurable technology for dual-output boost converter for energy harvesting.
IEICE Electron. Express, 2020
Proceedings of the IEEE International Symposium on Circuits and Systems, 2020
2019
Near-threshold SIDO DC-DC converter with a high-precision ZCD for phase change memory chip.
IEICE Electron. Express, 2019
2018
IEEE Trans. Very Large Scale Integr. Syst., 2018
IEEE Trans. Circuits Syst. II Express Briefs, 2018
Frontiers Inf. Technol. Electron. Eng., 2018
IEICE Electron. Express, 2018
From octahedral structure motif to sub-nanosecond phase transitions in phase change materials for data storage.
Sci. China Inf. Sci., 2018
2017
IEICE Electron. Express, 2017
Erratum: CAM-based retention-aware DRAM (CRA-DRAM) for refresh power reduction [IEICE Electronics Express Vol. 14 (2017) No. 10 pp. 20170053].
IEICE Electron. Express, 2017
IEICE Electron. Express, 2017
IEICE Electron. Express, 2017
A novel high performance 3×VDD-tolerant ESD detection circuit in advanced CMOS process.
IEICE Electron. Express, 2017
IEICE Electron. Express, 2017
Logic area reduction using the deep trench isolation technique based on 40 nm embedded PCM process.
IEICE Electron. Express, 2017
IEICE Electron. Express, 2017
2016
A 40-nm 16-Mb Contact-Programming Mask ROM Using Dual Trench Isolation Diode Bitcell.
IEEE Trans. Very Large Scale Integr. Syst., 2016
IEICE Electron. Express, 2016
IEICE Electron. Express, 2016
Sci. China Inf. Sci., 2016
2015
IEICE Electron. Express, 2015
IEICE Electron. Express, 2015
A smart primary side current sensing strategy for single stage isolated PFC controller.
IEICE Electron. Express, 2015
A three-dimensional numerical simulator of phase-change memory by random nucleation and growth approach.
Proceedings of the 15th Non-Volatile Memory Technology Symposium, 2015
Proceedings of the 15th Non-Volatile Memory Technology Symposium, 2015
Three-dimensional ovonic threshold switching model with combination of in-band and trap-to-band hopping mechanism for chalcogenide-based phase-change memory.
Proceedings of the 15th Non-Volatile Memory Technology Symposium, 2015
2014
Flexible block management with data migration wear-leveling algorithm for phase change memory.
IEICE Electron. Express, 2014
IEICE Electron. Express, 2014
A novel auxiliary-free zero inductor current detection scheme for step down non-isolated LED driver.
IEICE Electron. Express, 2014
Optimization of periphery circuits in a 1K-bit PCRAM chip for highly reliable write and read operations.
IEICE Electron. Express, 2014
2009
Memory characteristics of double-layer metal and semiconductor heterogeneous nanocrystals embedded in SiO<sub>2</sub>.
Proceedings of the 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, 2009
2007
Preparation of one-dimensional photonic crystal with variable period by using ultra-high vacuum electron beam evaporation.
Microelectron. J., 2007