Zhifeng Lei

According to our database, Zhifeng Lei authored at least 4 papers between 2017 and 2021.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2021

Research on Negative Bias Temperature Instability Effects Under the Coupling of Total Ionizing Dose Irradiation for PDSOI MOSFETs.

Chao Peng, Rui Gao, Zhifeng Lei, Zhangang Zhang, Yiqiang Chen, Yunfei En, Yun Huang

IEEE Access, 2021

2020

Investigation of Negative Bias Temperature Instability Effect in Partially Depleted SOI pMOSFET.

Chao Peng, Zhifeng Lei, Rui Gao, Zhangang Zhang, Yiqiang Chen, Yunfei En, Yun Huang

IEEE Access, 2020

2018

Degradation mechanisms of AlGaN/GaN HEMTs under 800 MeV Bi ions irradiation.

Zhifeng Lei, H. X. Guo, M. H. Tang, C. Zeng, Zhangang Zhang, H. Chen, Y. F. En, Y. Huang, Yiqiang Chen, Chao Peng

Microelectron. Reliab., 2018

2017

Radiation induced transconductance overshoot in the 130 nm partially-depleted SOI MOSFETs.

Chao Peng, Yunfei En, Zhengxuan Zhang, Yuan Liu, Zhifeng Lei

Microelectron. Reliab., 2017