Zhengsheng Han

Orcid: 0000-0002-4691-9683

According to our database¹, Zhengsheng Han authored at least 18 papers between 2011 and 2024.

Collaborative distances:

Dijkstra number² of five.
Erdős number³ of four.

Timeline

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In proceedings

Article

PhD thesis

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Links

On csauthors.net:

Bibliography

2024

A snapback-free and low-loss reverse conducting LIGBT with integrated multi-functional trench gates.

[BibT_eX]

[DOI]

IEICE Electron. Express, 2024

Jiezi: An open-source Python software for simulating quantum transport based on non-equilibrium Green's function formalism.

[BibT_eX]

[DOI]

Comput. Phys. Commun., 2024

SRAM-Based PUF with Noise Immunity Achieving 0.58% Native BER in 55-nm CMOS.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Symposium on Circuits and Systems, 2024

2023

Influence of Back Gate Bias on the Hot Carrier Reliability of DSOI nMOSFET.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2023

The Effects of $\gamma$ Radiation-Induced Trapped Charges on Single Event Transient in DSOI Technology.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

A snapback-free RC-LIGBT with separated LIGBT and FWD.

[BibT_eX]

[DOI]

IEICE Electron. Express, 2022

2019

Snapback-free base resistance controlled thyristor with floating N-region.

[BibT_eX]

[DOI]

IEICE Electron. Express, 2019

A new snapback-free base resistance controlled thyristor with semi-superjunction.

[BibT_eX]

[DOI]

IEICE Electron. Express, 2019

A snapback-free RC-LIGBT with separated LDMOS and LIGBT by the L-shaped SiO<sub>2</sub> layer.

[BibT_eX]

[DOI]

IEICE Electron. Express, 2019

Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique.

[BibT_eX]

[DOI]

IEEE Access, 2019

A Snapback-Free and Low-Loss RC-IGBT With Lateral FWD Integrated in the Terminal Region.

[BibT_eX]

[DOI]

IEEE Access, 2019

Influences of the Source and Drain Resistance of the MOSFETs on the Single Event Upset Hardness of SRAM cells.

[BibT_eX]

[DOI]

Proceedings of the 13th IEEE International Conference on ASIC, 2019

2018

Process variation dependence of total ionizing dose effects in bulk nFinFETs.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2018

Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2018

2017

A RC-IGBT with built-in free wheeling diode controlled by MOSFET.

[BibT_eX]

[DOI]

IEICE Electron. Express, 2017

System Analysis and PHM Methods for Power Devices Based on Physics-of-Failure.

[BibT_eX]

[DOI]

Proceedings of the International Conference on Dependable Systems and Their Applications, 2017

Roles of the gate length and width of the transistors in increasing the single event upset resistance of SRAM cells.

[BibT_eX]

[DOI]

Proceedings of the 12th IEEE International Conference on ASIC, 2017

2011

A new full current mode sense amplifier with compensation circuit.

[BibT_eX]

[DOI]

Proceedings of the 2011 IEEE 9th International Conference on ASIC, 2011

Zhengsheng Han

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