Zhe Chen

Orcid: 0000-0003-1214-0564

Affiliations:
  • Southeast University, State Key Laboratory of Millimeter-Waves, School of Information Science and Engineering, China
  • University of Texas, Dallas, Richardson, TX, USA (2016-2018)
  • Southeast University, Nanjing, China (PhD 2014)


According to our database1, Zhe Chen authored at least 19 papers between 2016 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

Legend:

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PhD thesis 
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Links

Online presence:

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Bibliography

2024
A D-Band OOK Transmitter With 50-GHz Bandwidth Achieving 32-Gbps Data Rate in 28-nm CMOS.
IEEE J. Solid State Circuits, August, 2024

A 1-27 GHz SiGe Low Noise Amplifier With 27-dB Peak Gain and 2.85±1.45 dB NF.
IEEE Trans. Circuits Syst. II Express Briefs, May, 2024

24.1 A 90-to-180GHz APD-Integrated Transmitter Achieving 18dBm Psat in 28nm CMOS.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024

2023
A 211-to-263-GHz Dual-LC-Tank-Based Broadband Power Amplifier With 14.7-dBm P<sub>SAT</sub> and 16.4-dB Peak Gain in 130-nm SiGe BiCMOS.
IEEE J. Solid State Circuits, February, 2023

A 220-GHz Sliding-IF Quadrature Transmitter and Receiver Chipset for High Data Rate Communication in 0.13-µm SiGe BiCMOS.
IEEE J. Solid State Circuits, 2023

A Simulation-Augmented Benchmarking Framework for Automatic RSO Streak Detection in Single-Frame Space Images.
CoRR, 2023

An Ultra-Wideband Amplifier with A Novel Non- Distributed Butterfly Topology Achieving 2-250 GHz Bandwidth and 4.67 THz GBW in 130nm SiGe BiCMOS.
Proceedings of the IEEE Custom Integrated Circuits Conference, 2023

A D-Band ASK Transmitter with 50GHz RF Bandwidth and Multi-Mode Interface Implemented in 28nm CMOS.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2023

A 110-160 GHz ASK Receiver with Isomorphic Low Noise Power Amplifier and Multi-Mode Interface in 28-nm CMOS.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2023

2022
W-band Scalable 2×2 Phased-Array Transmitter and Receiver Chipsets in SiGe BiCMOS for High Data-Rate Communication.
IEEE J. Solid State Circuits, 2022

A 220 GHz Sliding-IF Quadrature Transmitter With 38-dB Conversion Gain and 8-dBm Psat in 0.13-µm SiGe BiCMOS.
Proceedings of the IEEE Custom Integrated Circuits Conference, 2022

2021
Millimeter-wave wireless communications for home network in fiber-to-the-room scenario.
Frontiers Inf. Technol. Electron. Eng., 2021

Towards 6G wireless communication networks: vision, enabling technologies, and new paradigm shifts.
Sci. China Inf. Sci., 2021

2020
A 143.2-168.8-GHz signal source with 5.6 dBm peak output power in a 130-nm SiGe BiCMOS process.
Sci. China Inf. Sci., 2020

2019
Fully Integrated Tunable Wideband True Time Delay for Wireless Sensor Networks.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2019

A 280-325 GHz Frequency Multiplier Chain With 2.5 dBm Peak Output Power.
Proceedings of the IEEE Custom Integrated Circuits Conference, 2019

2018
A Design Approach for SiGe Low-Noise Amplifiers Using Wideband Input Matching.
Proceedings of the 2018 IEEE Nordic Circuits and Systems Conference, 2018

2016
Poster: Design consideration of 60 GHz low power low-noise amplifier in 65 nm CMOS.
Proceedings of the Symposium on Communications and Vehicular Technologies, 2016

A 16-43 GHz low-noise amplifer with 2.5-4.0 dB noise figure.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2016


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