Zhao-En Ke

According to our database, Zhao-En Ke authored at least 4 papers between 2024 and 2025.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2025

An Integer-Floating-Point Dual-Mode Gain-Cell Computing-in-Memory Macro for Advanced AI Edge Chips.

Ping-Chun Wu, Win-San Khwa, Jui-Jen Wu, Jian-Wei Su, Chuan-Jia Jhang, Ho-Yu Chen, Zhao-En Ke, Ting-Chien Chiu, Jun-Ming Hsu, Chiao-Yen Cheng, Yu-Chen Chen, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Meng-Fan Chang

IEEE J. Solid State Circuits, January, 2025

A 22 nm Floating-Point ReRAM Compute-in-Memory Macro Using Residue-Shared ADC for AI Edge Device.

Hung-Hsi Hsu, Tai-Hao Wen, Win-San Khwa, Wei-Hsing Huang, Zhao-En Ke, Yu-Hsiang Chin, Hua-Jin Wen, Yu-Chen Chang, Wei-Ting Hsu, Ashwin Sanjay Lele, Bo Zhang, Ping-Sheng Wu, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Shih-Hsih Teng, Chung-Cheng Chou, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang

IEEE J. Solid State Circuits, January, 2025

2024

34.8 A 22nm 16Mb Floating-Point ReRAM Compute-in-Memory Macro with 31.2TFLOPS/W for AI Edge Devices.

Tai-Hao Wen, Hung-Hsi Hsu, Win-San Khwa, Wei-Hsing Huang, Zhao-En Ke, Yu-Hsiang Chin, Hua-Jin Wen, Yu-Chen Chang, Wei-Ting Hsu, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Shih-Hsih Teng, Chung-Cheng Chou, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang

Proceedings of the IEEE International Solid-State Circuits Conference, 2024

34.2 A 16nm 96Kb Integer/Floating-Point Dual-Mode-Gain-Cell-Computing-in-Memory Macro Achieving 73.3-163.3TOPS/W and 33.2-91.2TFLOPS/W for AI-Edge Devices.

Win-San Khwa, Ping-Chun Wu, Jui-Jen Wu, Jian-Wei Su, Ho-Yu Chen, Zhao-En Ke, Ting-Chien Chiu, Jun-Ming Hsu, Chiao-Yen Cheng, Yu-Chen Chen, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Meng-Fan Chang

Proceedings of the IEEE International Solid-State Circuits Conference, 2024