Zhangli Liu

According to our database, Zhangli Liu authored at least 5 papers between 2011 and 2012.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2012

Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology.

Bingxu Ning, Zhengxuan Zhang, Zhangli Liu, Zhiyuan Hu, Ming Chen, Dawei Bi, Shichang Zou

Microelectron. Reliab., 2012

2011

Comparison of TID response in core, input/output and high voltage transistors for flash memory.

Zhangli Liu, Zhiyuan Hu, Zhengxuan Zhang, Hua Shao, Ming Chen, Dawei Bi, Bingxu Ning, Shichang Zou

Microelectron. Reliab., 2011

Total ionizing dose effects in elementary devices for 180-nm flash technologies.

Zhiyuan Hu, Zhangli Liu, Hua Shao, Zhengxuan Zhang, Bingxu Ning, Ming Chen, Dawei Bi, Shichang Zou

Microelectron. Reliab., 2011

The impact of total ionizing radiation on body effect.

Bingxu Ning, Zhiyuan Hu, Zhengxuan Zhang, Zhangli Liu, Ming Chen, Dawei Bi, Shichang Zou

Microelectron. J., 2011

Impact of within-wafer process variability on radiation response.

Zhiyuan Hu, Zhangli Liu, Hua Shao, Zhengxuan Zhang, Bingxu Ning, Ming Chen, Dawei Bi, Shichang Zou

Microelectron. J., 2011