Zefu Zhao
Orcid: 0000-0003-0796-1659
According to our database1,
Zefu Zhao
authored at least 5 papers
between 2013 and 2024.
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Bibliography
2024
Engineering Ferroelectric HZO With n<sup>+</sup>-Si/Ge Substrates Achieving High 2P<sub>r</sub>=84 μC/cm<sup>2</sup> and Endurance >1E11.
IEEE Access, 2024
Engineering HZO by Flat Amorphous TiN with 0.3nm Roughness Achieving Uniform c-Axis Alignment, Record High Breakdown Field (~10nm HZO), and Record Final 2Pr of 56 μC/cm<sup>2</sup> with Endurance > 4E12.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024
2023
Towards Epitaxial Ferroelectric HZO on n<sup>+</sup>-Si/Ge Substrates Achieving Record 2Pr = 84 μC/cm² and Endurance > 1E11.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record Low Write Voltage of 2V and Endurance >1E11 Cycles.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
2013
Proceedings of the 2013 The Second International Conference on Innovative Computing and Cloud Computing, 2013