Z.-F. Lou

According to our database, Z.-F. Lou authored at least 4 papers between 2022 and 2023.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2023

FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations.

Kuo-Yu Hsiang, J.-Y. Lee, F.-S. Chang, Z.-F. Lou, Z.-X. Li, Z.-H. Li, J.-H. Chen, C. W. Liu, T.-H. Hou, Min-Hung Lee

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Cryogenic Endurance of Anti-ferroelectric and Ferroelectric Hf_1-xZr_XO₂ for Quantum Computing Applications.

Kuo-Yu Hsiang, Jia-Yang Lee, Z.-F. Lou, F.-S. Chang, Z.-X. Li, C. W. Liu, T.-H. Hou, P. Su, Min-Hung Lee

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Endurance > 10¹¹ Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2 to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM.

C.-Y. Liao, K.-Y. Hsiang, Z.-F. Lou, H.-C. Tseng, C.-Y. Lin, Z.-X. Li, F.-C. Hsieh, C. C. Wang, F.-S. Chang, W.-C. Ray, Y.-Y. Tseng, Shu-Tong Chang, T. C. Chen, Min-Hung Lee

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Correlation between Access Polarization and High Endurance (~ 10¹² cycling) of Ferroelectric and Anti-Ferroelectric HfZrO2.

K.-Y. Hsiang, C.-Y. Liao, Y.-Y. Lin, Z.-F. Lou, C.-Y. Lin, J.-Y. Lee, F.-S. Chang, Z.-X. Li, H.-C. Tseng, C.-C. Wang, W.-C. Ray, T.-H. Hou, T.-C. Chen, C.-S. Chang, Min-Hung Lee

Proceedings of the IEEE International Reliability Physics Symposium, 2022