Yvon Cordier

According to our database, Yvon Cordier authored at least 6 papers between 1990 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs.

Gaudencio Paz-Martínez, Ignacio Iñiguez-de-la-Torre, Héctor Sánchez-Martín, José Antonio Novoa-López, Virginie Hoel, Yvon Cordier, Javier Mateos, Tomás González

Sensors, 2022

Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes.

P. Vigneshwara Raja, Christophe Raynaud, Camille Sonneville, Atse Julien Eric N'Dohi, Hervé Morel, Luong-Viêt Phung, Thi Huong Ngo, Philippe De Mierry, Éric Frayssinet, Hassan Maher, Josiane Tasselli, Karine Isoird, Frédéric Morancho, Yvon Cordier, Dominique Planson

Microelectron. J., 2022

2020

Recessed and P-GaN Regrowth Gate Development for Normally-off AlGaN/GaN HEMTs.

Chaymaa Haloui, Gaëtan Toulon, Josiane Tasselli, Yvon Cordier, Éric Frayssinet, Karine Isoird, Frédéric Morancho, Mathieu Gavelle

Proceedings of the 27th International Conference on Mixed Design of Integrated Circuits and System, 2020

2012

Reverse current thermal activation of AlGaN/GaN HEMTs on Si(1 1 1).

Abel Fontserè, A. Pérez-Tomás, Marcel Placidi, N. Baron, S. Chenot, Yvon Cordier, J. C. Moreno

Microelectron. Reliab., 2012

2001

Hemt's capability for millimeter wave applications.

S. Bollaert, Yvon Cordier, M. Zaknoune, T. Parenty, Henri Happy, Alain Cappy

Ann. des Télécommunications, 2001

1990

Modelling of pseudomorphic AlGaAs/GaInAs/AlGaAs layers using selfconsistent approach.

Jocelyn Alamkan, Henri Happy, Yvon Cordier, Alain Cappy

Eur. Trans. Telecommun., 1990