Yuye Kang

According to our database, Yuye Kang authored at least 11 papers between 2022 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Unveiling the Impact of AC PBTI on Hydrogen Formation in Oxide Semiconductor Transistors.

Gan Liu, Qiwen Kong, Zuopu Zhou, X. Ying, Chen Sun, Kaizhen Han, Yuye Kang, Dong Zhang, Xiaolin Wang, Yang Feng, Wei Shi, Bich-Yen Nguyen, N. Kai, Gengchiau Liang, Xiao Gong

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

First Demonstration of BEOL-Compatible 3D Vertical FeNOR.

Yang Feng, Dong Zhang, Chen Sun, Zijie Zheng, Yue Chen, Qiwen Kong, Gan Liu, Yuye Kang, Kaizhen Han, Zuopu Zhou, Gengchiau Liang, Kai Ni, Jixuan Wu, Jiezhi Chen, Xiao Gong

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Fluorine Plasma Treatment-Enabled ITO Transistors: Excellent Reliability and Comprehensive Understanding of Temperature Dependence from 77K to 375K.

Xuanqi Chen, Gan Liu, Wei Shi, Yuye Kang, Qiwen Kong, Yuxuan Wang, Rui Shao, Bich-Yen Nguyen, Gengchiau Liang, Kaizhen Han, Xiao Gong

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2023

Grain Size Reduction of Ferroelectric HZO Enabled by a Novel Solid Phase Epitaxy (SPE) Approach: Working Principle, Experimental Demonstration, and Theoretical Understanding.

Dong Zhang, Jixuan Wu, Qiwen Kong, Zuopu Zhou, Long Liu, Kaizhen Han, Chen Sun, Xiaolin Wang, Gan Liu, Leming Jiao, Zijie Zheng, Yuye Kang, Jiezhi Chen, Xiao Gong

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

First Demonstration of BEOL-Compatible MFMIS Fe-FETs with 3D Multi-Fin Floating Gate: In-situ ALD-deposited MFM, LCH of 50 nm, > 2×10⁹ Endurance, and 58.3% Area Saving.

Xiaolin Wang, Zijie Zheng, Qiwen Kong, Leming Jiao, Kaizhen Han, Chen Sun, Zuopu Zhou, Long Liu, Yuye Kang, Gan Liu, Dong Zhang, Xiao Gong

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Thickness-Engineered Extremely-thin Channel High Performance ITO TFTs with Raised S/D Architecture: Record-Low RSD, Highest Moblity (Sub-4 nm TCH Regime), and High VTH Tunability.

Yuye Kang, Kaizhen Han, Yue Chen, Xiao Gong

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

First Demonstration of BEOL-Compatible Write-Enhanced Ferroelectric-Modulated Diode (FMD): New Possibility for Oxide Semiconductor Memory Devices.

Leming Jiao, Kaizhen Han, Zuopu Zhou, Zijie Zheng, Xiaolin Wang, Qiwen Kong, Yuye Kang, Jishen Zhang, Long Liu, Xiao Gong

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Novel Bridge Transmission Line Method for Thin-Film Semiconductors: Modelling, Simulation Verification, and Experimental Demonstration.

Kaizhen Han, Yuye Kang, Yue Chen, Xiao Gong

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2022

Experimental Demonstration of An Inversion-Type Ferroelectric Capacitive Memory and its 1 kbit Crossbar Array Featuring High CHCS/CLCS, Fast Speed, and Long Retention.

Zuopu Zhou, Leming Jiao, Jiuren Zhou, Zijie Zheng, Yue Chen, Kaizhen Han, Yuye Kang, Xiao Gong

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Extremely Scaled Bottom Gate a-IGZO Transistors Using a Novel Patterning Technique Achieving Record High Gm of 479.5 μS/μm (VDS of 1 V) and fT of 18.3 GHz (VDS of 3 V).

Chengkuan Wang, Annie Kumar, Kaizhen Han, Chen Sun, Haiwen Xu, Jishen Zhang, Yuye Kang, Qiwen Kong, Zijie Zheng, Yuxuan Wang, Xiao Gong

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

BEOL-compatible Ta/HZO/W Ferroelectric Tunnel Junction with Low Operating Voltage Targeting for Low Power Application.

Leming Jiao, Zuopu Zhou, Zijie Zheng, Yuye Kang, Chen Sun, Qiwen Kong, Xiaolin Wang, Dong Zhang, Gan Liu, Long Liu, Xiao Gong

Proceedings of the International Conference on IC Design and Technology, 2022