Yutaro Yamaguchi

According to our database, Yutaro Yamaguchi authored at least 9 papers between 2018 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

A Review of GaN MMIC Power Amplifier Technologies for Millimeter-Wave Applications.

Keigo Nakatani, Yutaro Yamaguchi, Takuma Torii, Masaomi Tsuru

IEICE Trans. Electron., October, 2022

2021

Overview and Prospects of High Power Amplifier Technology Trend for 5G and beyond 5G Base Stations.

Koji Yamanaka, Shintaro Shinjo, Yuji Komatsuzaki, Shuichi Sakata, Keigo Nakatani, Yutaro Yamaguchi

IEICE Trans. Electron., 2021

2020

Millimeter-Wave GaN Device Modeling for Power Amplifiers.

Yutaro Yamaguchi, Keigo Nakatani, Koon Hoo Teo, Shintaro Shinjo

Proceedings of the 2020 Device Research Conference, 2020

A Wideband and High Efficiency Ka-band GaN Doherty Power Amplifier for 5G Communications.

Yutaro Yamaguchi, Keigo Nakatani, Shintaro Shinjo

Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2020

2019

GaN Amplifiers of Selectable Output Power Function with Semi-Custom Matching Networks.

Yutaro Yamaguchi, Masatake Hangai, Shintaro Shinjo, Takaaki Yoshioka, Naoki Kosaka

IEICE Trans. Electron., 2019

Millimeter-Wave GaN Power Amplifier MMICs for 5G Application.

Keigo Nakatani, Yutaro Yamaguchi, Yuji Komatsuzaki, Shintaro Shinjo

Proceedings of the IEEE International Symposium on Circuits and Systems, 2019

Study of Self-heating Effect of GaN HEMTs with Buffer Traps by Low Frequency S-parameters Measurements and TCAD Simulation.

Tomohiro Otsuka, Yutaro Yamaguchi, Shintaro Shinjo, Toshiyuki Oishi

Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

A Ka-Band CW 15.5W 15.6% Fractional Bandwidth GaN Power Amplifier MMIC Using Wideband BPF Inter-stage Matching Network.

Keigo Nakatani, Yutaro Yamaguchi, Masatake Hangai, Shintaro Shinjo

Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019

2018

Ka-Band GaN Large-Signal Model Considering Trap Effect on Nonlinear Capacitance by Using Transient S-Parameters Measurement.

Yutaro Yamaguchi, Tomohiro Otsuka, Masatake Hangai, Shintaro Shinjo, Toshiyuki Oishi

Proceedings of the 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018