Yutao Cai

According to our database, Yutao Cai authored at least 6 papers between 2019 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

Investigation of normally-OFF AlGaN/GaN MIS-HEMTs with Al2O3/ZrOx/Al2O3 charge trapping layer.

Jiachen Duan, Yuanlei Zhang, Ye Liang, Yutao Cai, Wen Liu

Proceedings of the International Conference on IC Design and Technology, 2022

2021

Threshold Voltage Instability in D-mode AlGaN/GaN MIS-HEMTs with Al2O3 Gate Dielectric.

Ye Liang, Yuanlei Zhang, Yutao Cai, Zhaoyi Wang, Yinchao Zhao, Huiqing Wen, Wen Liu

Proceedings of the International Conference on IC Design and Technology, 2021

2020

Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices.

Yutao Cai, Yang Wang, Ye Liang, Yuanlei Zhang, Wen Liu, Huiqing Wen, Ivona Z. Mitrovic, Cezhou Zhao

IEEE Access, 2020

2019

The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters.

Miao Cui, Yutao Cai, Qinglei Bu, Wen Liu, Huiqing Wen, Ivona Z. Mitrovic, Stephen Taylor, Paul R. Chalker, Cezhou Zhao

Proceedings of the International Conference on IC Design and Technology, 2019

Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices.

Yutao Cai, Yang Wang, Miao Cui, Wen Liu, Huiqing Wen, Cezhou Zhao, Ivona Z. Mitrovic, Stephen Taylor, Paul R. Chalker

Proceedings of the International Conference on IC Design and Technology, 2019

Experimental Comparison of AlGaN/GaN-on-Si Schottky Barrier Diode With and Without Recessed Anode.

Qinglei Bu, Yutao Cai, Miao Cui, Huiqing Wen, Wen Liu

Proceedings of the International Conference on IC Design and Technology, 2019