Yusung Kim

Orcid: 0000-0002-4051-3789

Affiliations:
  • Intel Corporation, Hillsboro, OR, USA
  • Purdue University, School of Electrical and Computer Engineering, West Lafayette, IN, USA (former)
  • Purdue University, West Lafayette, IN, USA (PhD 2015)


According to our database1, Yusung Kim authored at least 11 papers between 2012 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

Legend:

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In proceedings 
Article 
PhD thesis 
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Links

Online presence:

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Bibliography

2024
15.2 A 2048x60m4 SRAM Design in Intel 4 with an Around-the-Array Power-Delivery Scheme Using PowerVia.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024

2023
Energy-Efficient High Bandwidth 6T SRAM Design on Intel 4 CMOS Technology.
IEEE J. Solid State Circuits, 2023

2020
A 10nm SRAM Design using Gate-Modulated Self-Collapse Write Assist Enabling 175mV VMIN Reduction with Negligible Power Overhead.
Proceedings of the IEEE Symposium on VLSI Circuits, 2020

2016
Spin-Transfer Torque Devices for Logic and Memory: Prospects and Perspectives.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2016

Spin-Transfer Torque Memories: Devices, Circuits, and Systems.
Proc. IEEE, 2016

2015
Exploring Spin Transfer Torque Devices for Unconventional Computing.
IEEE J. Emerg. Sel. Topics Circuits Syst., 2015

Magnetic Tunnel Junction Mimics Stochastic Cortical Spiking Neurons.
CoRR, 2015

2014
AWARE (Asymmetric Write Architecture With REdundant Blocks): A High Write Speed STT-MRAM Cache Architecture.
IEEE Trans. Very Large Scale Integr. Syst., 2014

Failure Mitigation Techniques for 1T-1MTJ Spin-Transfer Torque MRAM Bit-cells.
IEEE Trans. Very Large Scale Integr. Syst., 2014

Spin Orbit Torque Based Electronic Neuron.
CoRR, 2014

2012
Write-optimized reliable design of STT MRAM.
Proceedings of the International Symposium on Low Power Electronics and Design, 2012


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